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PDF PBLS6022D Data sheet ( Hoja de datos )
| Número de pieza | PBLS6022D | |
| Descripción | 1.5 A PNP BISS Loadswitch | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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PBLS6022D
60 V, 1.5 A PNP BISS loadswitch
Rev. 01 — 13 August 2009
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
plastic package.
1.2 Features
I Low VCEsat (BISS) and resistor-equipped transistor in one package
I Low threshold voltage (<1 V) compared to MOSFET
I Space-saving solution
I Reduction of component count
I AEC-Q101 qualified
1.3 Applications
I Supply line switches
I Battery charger switches
I High-side switches for LEDs, drivers and backlights
I Portable equipment
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
TR1; PNP low VCEsat transistor
VCEO
collector-emitter voltage open base
IC collector current
ICM
peak collector current
single pulse;
tp ≤ 1 ms
RCEsat
collector-emitter saturation IC = −1.5 A;
resistance
IB = −100 mA
TR2; NPN resistor-equipped transistor
-
-
-
[1] -
- −60 V
- −1.5 A
- −3 A
110 175 mΩ
VCEO
IO
R1
collector-emitter voltage
output current
bias resistor 1 (input)
open base
- - 50 V
- - 100 mA
3.3 4.7 6.1 kΩ
R2/R1
bias resistor ratio
0.8 1
1.2
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
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PBLS6022D
60 V, 1.5 A PNP BISS loadswitch
103
Zth(j-a)
(K/W)
102
10
1
δ=1
0.50
0.20
0.05
0.01
0.75
0.33
0.10
0.02
0
006aab508
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Fig 2.
FR4 PCB, standard footprint
TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
103
Zth(j-a)
(K/W)
102
10
1
δ=1
0.50
0.20
0.05
0.01
0.75
0.33
0.10
0.02
0
006aab509
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Fig 3.
FR4 PCB, mounting pad for collector 1 cm2
TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBLS6022D_1
Product data sheet
Rev. 01 — 13 August 2009
© NXP B.V. 2009. All rights reserved.
5 of 16
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1
VCEsat
(V)
10−1
006aaa031
(1)
(2)
(3)
1
VCEsat
(V)
PBLS6022D
60 V, 1.5 A PNP BISS loadswitch
006aab520
10−2
1
10 102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 16. TR2 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
10−1
10
IC/IB = 50; Tamb = 25 °C
IC (mA)
102
Fig 17. TR2 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
PBLS6022D_1
Product data sheet
Rev. 01 — 13 August 2009
© NXP B.V. 2009. All rights reserved.
11 of 16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet PBLS6022D.PDF ] | |
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