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PDF GT60M324 Data sheet ( Hoja de datos )
| Número de pieza | GT60M324 | |
| Descripción | SILICON N CHANNEL IGBT | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de GT60M324 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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GT60M324
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60M324
Consumer Application
Voltage Resonance Inverter Switching Application
Sixth Generation IGBT
Unit: mm
• FRD included between emitter and collector
• Enhancement mode type
• High speed IGBT : tf = 0.11μs (typ.) (IC = 60A)
FRD : trr = 0.8μs (typ.) (di/dt = −20 A/μs)
• Low saturation voltage: VCE (sat) =1.70V (typ.) (IC = 60A)
• High Junction temperature : Tj = 175℃ (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
Collector current
Diode forward current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature
DC
1ms
DC
1ms
VCES
VGES
IC
ICP
IF
IFP
PC
Tj
Tstg
900
± 25
60
120
15
120
254
175
−40 to 175
V
V
A
A
W
°C
°C
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
In general, loss of IGBT increases more when it has positive temperature coefficient and gets higher
temperature. In case that the temperature rise due to loss of IGBT exceeds the heat release capacity of a
device, it leads to thermorunaway and results in destruction. Therefore, please design heat release of a device
with due consideration to the temperature rise of IGBT.
Marking
Equivalent Circuit
Collector
TOSHIBA
60M324
Part No. (or abbreviation code)
Lot No.
Note 1
Gate
Note 1: A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental
matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of
27 January 2003 on the restriction of the use of certain hazardous substances in
electrical and electronic equipment.
1
Emitter
2009-10-19
1 page  
120
Common emitter
100 VGE = 0
IF – VF
80
60
25
40
Tc = 150°C
20 −40
0
0 0.5 1.0 1.5 2.0 2.5 3.0
Forward voltage VF (V)
Irr, trr – di/dt
50 1.25
Common emitter
IF = 60 A
Tc = 25°C
40 1
trr
30 0.75
20
Irr
10
0.5
0.25
00
0 50 100 150 200 250
di/dt (A/μs)
GT60M324
Irr, trr – IF
10 2.5
Common emitter
di/dt = −20 A/μs
Tc = 25°C
92
8 1.5
Irr
7
trr
1
6 0.5
50
0 20 40 60 80
Forward current IF (A)
5 2009-10-19
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet GT60M324.PDF ] | |
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