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Número de pieza | PESD5V0V1BA | |
Descripción | Very low capacitance bidirectional ESD protection diodes | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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PESD5V0V1BA; PESD5V0V1BB;
PESD5V0V1BL
Very low capacitance bidirectional ESD protection diodes
Rev. 01 — 28 July 2009
Product data sheet
1. Product profile
1.1 General description
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in
small Surface-Mounted Device (SMD) plastic packages designed to protect one signal
line from the damage caused by ESD and other transients.
Table 1. Product overview
Type number
Package
NXP
PESD5V0V1BA
SOD323
PESD5V0V1BB
SOD523
PESD5V0V1BL
SOD882
JEITA
SC-76
SC-79
-
Package configuration
very small
ultra small and flat lead
leadless ultra small
1.2 Features
I Bidirectional ESD protection of one line I ESD protection up to 30 kV
I Very low diode capacitance: Cd = 11 pF I IEC 61000-4-2; level 4 (ESD)
I Max. peak pulse power: PPP = 45 W
I Low clamping voltage: VCL = 12.5 V
I IEC 61000-4-5 (surge); IPP = 4.8 A
I AEC-Q101 qualified
I Ultra low leakage current: IRM < 1 nA
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Cellular handsets and accessories
I Subscriber Identity Module (SIM) card
protection
I Communication systems
I Portable electronics
I 10/100 Mbit/s Ethernet
I FireWire
1.4 Quick reference data
Table 2. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VRWM
Cd
reverse standoff voltage
diode capacitance
f = 1 MHz; VR = 0 V
Min Typ Max Unit
- - 5V
- 11 13 pF
1 page www.DNatXaSPheSete4Um.coicmonductors
PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
12
Cd
(pF)
10
006aab607
103
IRM
IRM(25°C)
102
10
006aab608
1
8
10−1
6
012345
VR (V)
Fig 5.
f = 1 MHz; Tamb = 25 °C
Diode capacitance as a function of reverse
voltage; typical values
10−2
−100
−50
0
50 100 150
Tj (°C)
Fig 6.
Relative variation of reverse leakage current
as a function of junction temperature; typical
values
IPP
−VCL −VBR −VRWM
IR
IRM
−IRM
−IR
VRWM VBR VCL
−+
−IPP
Fig 7. V-I characteristics for a bidirectional ESD protection diode
006aaa676
PESD5V0V1BA_BB_BL_1
Product data sheet
Rev. 01 — 28 July 2009
© NXP B.V. 2009. All rights reserved.
5 of 13
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PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
12. Revision history
Table 11. Revision history
Document ID
PESD5V0V1BA_BB_BL_1
Release date
20090728
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PESD5V0V1BA_BB_BL_1
Product data sheet
Rev. 01 — 28 July 2009
© NXP B.V. 2009. All rights reserved.
11 of 13
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet PESD5V0V1BA.PDF ] |
Número de pieza | Descripción | Fabricantes |
PESD5V0V1BA | Very low capacitance bidirectional ESD protection diodes | NXP Semiconductors |
PESD5V0V1BB | Very low capacitance bidirectional ESD protection diodes | NXP Semiconductors |
PESD5V0V1BCSF | Ultra low profile bidirectional very low capacitance ESD protection diode | NXP Semiconductors |
PESD5V0V1BDSF | Very low capacitance bidirectional ESD protection diode | NXP Semiconductors |
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