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PDF G4PF50W Data sheet ( Hoja de datos )
| Número de pieza | G4PF50W | |
| Descripción | IRG4PF50W | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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 1. 900V, IGBT ) - IR  Hay una vista previa y un enlace de descarga de G4PF50W (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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PD - 91710
IRG4PF50W
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Optimized for use in Welding and Switch-Mode
Power Supply applications
• Industry benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest technology IGBT design offers tighter
parameter distribution coupled with exceptional
reliability
Benefits
• Lower switching losses allow more cost-effective
operation and hence efficient replacement of larger-
die MOSFETs up to 100kHz
• Of particular benefit in single-ended converters and
Power Supplies 150W and higher
• Reduction in critical Eoff parameter due to minimal
minority-carrier recombination coupled with low on-
state losses allow maximum flexibility in device
application
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
C
G
E
n-channel
VCES = 900V
VCE(on) typ. = 2.25V
@VGE = 15V, IC = 28A
TO-247AC
Max.
900
51
28
204
204
± 20
186
200
78
-55 to + 150
300 (0.063 in. (1.6mm from case )
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.64
–––
40
–––
Units
°C/W
g (oz)
1
4/15/98
1 page  
IRG4PF50W
6000
5000
4000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
3000
2000
1000
Coes
Cres
0
1 10 100
VCE , Collector-to-Emitter Voltage (V)
20 VCC = 400V
I C = 28A
16
12
8
4
0
0 40 80 120 160
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
4.0
VCC = 720V
VGE = 15V
TJ = 25 °C
IC = 28A
3.0
2.0
100 RG = O5.h0mΩ
VGE = 15V
VCC = 720V
10
1
IC = 56 A
IC = 28 A
IC = 14 A
1.0
0
10 20 30 40 50
RG , Gate Resistance ( Ω )
60
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet G4PF50W.PDF ] | |
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