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Número de pieza | EIC0910-25 | |
Descripción | 9.50-10.50 GHz 25-Watt Internally Matched Power FET | |
Fabricantes | Excelics Semiconductor | |
Logotipo | ||
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EIC0910-25
9.50-10.50 GHz 25-Watt Internally Matched Power FET
FEATURES
• 9.50 – 10.50GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +44 dBm Output Power at 1dB Compression
• 7 dB Power Gain at 1dB Compression
• 30% Power Added Efficiency
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
2X 0.079 MIN
4X 0.102
0.945 0.803
Excelics
EIC0910-25
YYWW
SN
0.010
0.158
0.055
0.315
0.685
0.617
0.024
0.580
0.004
0.095
0.055
0.168
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
MIN TYP MAX
P1dB
G1dB
∆G
PAE
Id1dB
Output Power at 1dB Compression
f = 9.50-10.50GHz
VDS = 10 V, IDSQ ≈ 5000mA
Gain at 1dB Compression
f = 9.50-10.50GHz
VDS = 10 V, IDSQ ≈ 5000mA
Gain Flatness
f = 9.50-10.50GHz
VDS = 10 V, IDSQ ≈ 5000mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 5000mA
f = 9.50-10.50GHz
Drain Current at 1dB Compression
f = 9.50-10.50GHz
43
6
44
7
30
6800
±0.6
8300
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
11 16
VP Pinch-off Voltage
VDS = 3 V, IDS = 130 mA
-2.5 -4.0
RTH Thermal Resistance2
1.4 1.8
1. Tested with 15 Ohm gate resistor, forward and reverse gate current should not exceed 105mA and -10.5mA respectively
2. Overall Rth depends on case mounting.
UNITS
dBm
dB
dB
%
mA
A
V
oC/W
MAXIMUM RATING AT 25°C1,2
SYMBOLS
PARAMETERS
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Pin Input Power
Tch Channel Temperature
Tstg
Storage Temperature
Pt Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
ABSOLUTE1
15
-5
38.5 dBm
175 oC
-65 to +175 oC
83W
CONTINUOUS2
10V
-4V
@ 3dB Compression
175 oC
-65 to +175 oC
83W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revision. 01
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet EIC0910-25.PDF ] |
Número de pieza | Descripción | Fabricantes |
EIC0910-2 | Internally Matched Power FET | Excelics Semiconductor |
EIC0910-25 | 9.50-10.50 GHz 25-Watt Internally Matched Power FET | Excelics Semiconductor |
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