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Número de pieza | KRF7509 | |
Descripción | HEXFET Power MOSFET | |
Fabricantes | Guangdong Kexin Industrial | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de KRF7509 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! SMD Type
HEXFET Power MOSFET
KRF7509
Features
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain Current, VGS @ 10V @ Ta = 25
ID
Continuous Drain Current, VGS @ 10V @ Ta = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation
Power Dissipation
@Ta= 25
@Ta= 70
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Gate-to-Source Voltage Single Pulse tp<10 S
VGSM
Peak Diode Recovery dv/dt *2
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *3
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 N-Channel ISD 1.7A, di/dt 120A/ s, VDD
P-Channel ISD -1.2A, di/dt 160A/ s, VDD
*3 Surface mounted on FR-4 board, t 10sec.
V(BR)DSS, TJ
V(BR)DSS, TJ
150
150
N-Channel
P-Channel
30 -30
2.7 -2
2.1 -1.6
21 -16
1.25
0.8
10
20
30
5.0
-55 to + 150
100
Unit
V
A
W
m W/
V
V/ns
/W
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Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet KRF7509.PDF ] |
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KRF7506 | HEXFET Power MOSFET | Guangdong Kexin Industrial |
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