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Número de pieza | DMN6068LK3 | |
Descripción | New Generation MOSFET | |
Fabricantes | Diodes | |
Logotipo | ||
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Product Summary
V(BR)DSS
60V
RDS(on)
68mΩ @ VGS= 10V
100mΩ @ VGS= 4.5V
ID
TA = 25°C
8.5A
7.0A
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• Backlighting
• DC-DC Converters
• Power management functions
A Product Line of
Diodes Incorporated
DMN6068LK3
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Features and Benefits
• Low on-resistance
• Fast switching speed
• “Green” component and RoHS compliant (Note 1)
Mechanical Data
• Case: TO252-3L
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals Connections: See Diagram
• Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Below
• Ordering Information: See Below
• Weight: 0.33 grams (approximate)
DD
TOP VIEW
D
GS
PIN OUT -TOP VIEW
G
S
Equivalent Circuit
Ordering Information (Note 1)
Product
DMN6068LK3-13
Marking
N6068L
Reel size (inches)
13
Tape width (mm)
16
Quantity per reel
2,500
Note:
1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
YYWW
N6068L
= Manufacturer’s Marking
N6068L = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)
DMN6068LK3
Document Revision: 1
1 of 8
www.diodes.com
July 2009
© Diodes Incorporated
1 page www.DataSheet4U.com
Typical Characteristics
A Product Line of
Diodes Incorporated
DMN6068LK3
T = 25°C 10V 5V
10 4.5V
4V
1
3.5V
V
0.1 GS
3V
0.01
0.1 1 10
V Drain-Source Voltage (V)
DS
Output Characteristics
T = 150°C
10
1
10V
4.5V
4V
3.5V
3V
0.1 2.5V
V
GS
2V
0.01
0.1 1 10
V Drain-Source Voltage (V)
DS
Output Characteristics
10 V = 10V
DS
1
T = 150°C
0.1
0.01
T = 25°C
1E-3
1234
V Gate-Source Voltage (V)
GS
Typical Transfer Characteristics
2.0 V = 10V
GS
1.8 I = 12A
D
1.6 R
DS(on)
1.4
1.2
1.0
0.8
V =V
GS DS
V
GS(th)
0.6 I = 250uA
D
0.4
5 -50 0 50 100 150
Tj Junction Temperature (°C)
Normalised Curves v Temperature
100
3V
10
3.5V
4V
V
GS
1 4.5V 5V
0.1
10V
T = 25°C
0.01
0.01 0.1 1 10
I Drain Current (A)
D
On-Resistance v Drain Current
10
T = 150°C
1
0.1
T = 25°C
Vgs = 0V
0.01
0.2 0.4 0.6 0.8 1.0
V Source-Drain Voltage (V)
SD
Source-Drain Diode Forward Voltage
DMN6068LK3
Document Revision: 1
5 of 8
www.diodes.com
July 2009
© Diodes Incorporated
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet DMN6068LK3.PDF ] |
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