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Teilenummer | DMN4015LK3 |
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Beschreibung | New Generation MOSFET | |
Hersteller | Diodes | |
Logo | ||
Gesamt 8 Seiten www.DataSheet4U.com
Product Summary
V(BR)DSS
40V
RDS(on)
15mΩ @ VGS= 10V
20mΩ @ VGS= 4.5V
ID
TA = 25°C
20.8A
18.0A
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• Backlighting
• DC-DC Converters
• Power management functions
A Product Line of
Diodes Incorporated
DMN4015LK3
40V N-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Features and Benefits
• Low on-resistance
• Fast switching speed
• “Green” component and RoHS compliant (Note 1)
Mechanical Data
• Case: TO252-3L
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals Connections: See Diagram
• Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Below
• Ordering Information: See Below
• Weight: 0.33 grams (approximate)
DD
TOP VIEW
D
GS
PIN OUT -TOP VIEW
G
S
Equivalent Circuit
Ordering Information (Note 1)
Product
DMN4015LK3-13
Marking
N4015L
Reel size (inches)
13
Tape width (mm)
16
Quantity per reel
2,500
Note:
1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
YYWW
N4015L
= Manufacturer’s Marking
N4015L = Product Type Marking Code
YYWW = Date Code Marking
YY = Last two digits of year (ex: 09 = 2009)
WW = Week (01-52)
DMN4015LK3
Document Revision: 1
1 of 8
www.diodes.com
July 2009
© Diodes Incorporated
www.DataSheet4U.com
Typical Characteristics - continued
A Product Line of
Diodes Incorporated
DMN4015LK3
3000
2500
2000
1500
1000
C
ISS
V = 0V
GS
f = 1MHz
C
OSS
C
RSS
500
0
0.1 1 10
V - Drain - Source Voltage (V)
DS
Capacitance v Drain-Source Voltage
10
8
6
4
2
V = 20V
DS
I = 14A
D
0
0 5 10 15 20 25 30 35 40 45
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Test Circuits
V G Q GS
QG
Q GD
Charge
Basic gate charge waveform
Current
regulator
12V 50k Same as
D.U.T
IG
VGS
D.U.T
VDS
ID
Gate charge test circuit
V DS
90%
10%
V GS
td(on)
tr
t(on)
td(off)
tr
t(on)
Switching time waveforms
VGS
RG
RD
VDS
VDD
Switching time test circuit
DMN4015LK3
Document Revision: 1
6 of 8
www.diodes.com
July 2009
© Diodes Incorporated
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ DMN4015LK3 Schematic.PDF ] |
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