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PDF DMN3024LSS Data sheet ( Hoja de datos )
| Número de pieza | DMN3024LSS | |
| Descripción | New Generation MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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A Product Line of
Diodes Incorporated
DMN3024LSS
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Product Summary
V(BR)DSS
30V
RDS(on)
24mΩ @ VGS= 10V
36mΩ @ VGS= 4.5V
ID
TA = 25°C
8.5A
6.9A
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• Motor control
• Backlighting
• DC-DC Converters
• Power management functions
Features and Benefits
• Low on-resistance
• Fast switching speed
• “Green” component and RoHS compliant (Note 1)
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Weight: 0.074 grams (approximate)
D
S D
TOP VIEW
SD
SD
GD
TOP VIEW
G
S
Equivalent Circuit
Ordering Information (Note 1)
Product
DMN3024LSS-13
Marking
N3024LS
Reel size (inches)
13
Tape width (mm)
12
Quantity per reel
2,500
Note:
1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
N3024LS
YY WW
N3024LS = Product Type Marking Code
= Manufacturer’s Marking
YY WW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)
DMN3024LSS
Document Revision: 3
1 of 8
www.diodes.com
July 2009
© Diodes Incorporated
1 page  
www.DataSheet4U.com
A Product Line of
Diodes Incorporated
DMN3024LSS
Typical Characteristics
10V 5V
4V
10
3.5V
1 3V
0.1 2.5V
T = 25°C
V
GS
0.01
0.1 1 10
V Drain-Source Voltage (V)
DS
Output Characteristics
T = 150°C
10
10V
1
0.1
4V
3.5V
V
GS
3V
2.5V
2V
0.01
1.5V
0.1 1 10
V Drain-Source Voltage (V)
DS
Output Characteristics
10 V = 10V
DS
T = 150°C
1
T = 25°C
0.1
23
V Gate-Source Voltage (V)
GS
Typical Transfer Characteristics
1.6
V = 10V
GS
1.4 I = 7A
DR
DS(on)
1.2
1.0
0.8
V
GS(th)
0.6
V =V
GS DS
I = 250uA
D
0.4
4 -50 0 50 100 150
Tj Junction Temperature (°C)
Normalised Curves v Temperature
1000
100
2.5V
T = 25°C
V
GS
3V
10
3.5V
1
4V
0.1 4.5V
10V
0.01
0.01 0.1
1
10
I Drain Current (A)
D
On-Resistance v Drain Current
10
T = 150°C
1
0.1 T = 25°C
0.01
Vgs = -3V
1E-3
0.2 0.4 0.6 0.8
V Source-Drain Voltage (V)
SD
Source-Drain Diode Forward Voltage
1.0
DMN3024LSS
Document Revision: 3
5 of 8
www.diodes.com
July 2009
© Diodes Incorporated
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet DMN3024LSS.PDF ] | |
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