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PBLS2024D Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer PBLS2024D
Beschreibung 1.8 A PNP BISS Loadswitch
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 16 Seiten
PBLS2024D Datasheet, Funktion
www.DataSheet4U.com
PBLS2024D
20 V, 1.8 A PNP BISS loadswitch
Rev. 01 — 20 July 2009
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
plastic package.
1.2 Features
I Low VCEsat (BISS) and resistor-equipped transistor in one package
I Low threshold voltage (<1 V) compared to MOSFET
I Space-saving solution
I Reduction of component count
I AEC-Q101 qualified
1.3 Applications
I Supply line switches
I Battery charger switches
I High-side switches for LEDs, drivers and backlights
I Portable equipment
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
TR1; PNP low VCEsat transistor
VCEO
collector-emitter voltage open base
IC collector current
ICM
peak collector current
single pulse;
tp 1 ms
RCEsat
collector-emitter saturation IC = 1.8 A;
resistance
IB = 100 mA
TR2; NPN resistor-equipped transistor
VCEO
IO
R1
collector-emitter voltage
output current
bias resistor 1 (input)
open base
R2/R1
bias resistor ratio
[1] Pulse test: tp 300 µs; δ ≤ 0.02.
Min Typ
--
--
--
[1] -
78
--
--
15.4 22
0.8 1
Max Unit
20 V
1.8 A
3 A
117 m
50 V
100 mA
28.6 k
1.2






PBLS2024D Datasheet, Funktion
www.DNatXaSPheSete4Um.coicmonductors
PBLS2024D
20 V, 1.8 A PNP BISS loadswitch
103
Zth(j-a)
(K/W)
102
10
1
δ=1
0.50
0.20
0.05
0.01
0.75
0.33
0.10
0.02
0
006aab510
101
105
104
103
102
101
1
10 102 103
tp (s)
Fig 4.
Ceramic PCB, Al2O3, standard footprint
TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
TR1; PNP low VCEsat transistor
ICBO
collector-base cut-off
current
ICES collector-emitter
cut-off current
VCB = 20 V; IE = 0 A
VCB = 20 V; IE = 0 A;
Tj = 150 °C
VEB = 16 V; VBE = 0 A
IEBO emitter-base cut-off VEB = 5 V; IC = 0 A
current
hFE
VCEsat
RCEsat
VBEsat
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
VCE = 2 V; IC = 100 mA
VCE = 2 V; IC = 500 mA
VCE = 2 V; IC = 1 A
VCE = 2 V; IC = 1.8 A
IC = 0.5 A; IB = 50 mA
IC = 1 A; IB = 50 mA
IC = 1 A; IB = 100 mA
IC = 1.8 A; IB = 100 mA
IC = 1 A; IB = 100 mA
IC = 1.8 A; IB = 100 mA
IC = 0.5 A; IB = 50 mA
IC = 1.8 A; IB = 100 mA
Min
-
-
-
-
220
[1] 220
[1] 200
[1] 160
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
Typ Max Unit
- 100 nA
- 50 µA
- 100 nA
- 100 nA
420 -
410 -
320 -
260 -
45 70
85 130
80 120
140 210
80 120
78 117
0.85 1
0.93 1.1
mV
mV
mV
mV
m
m
V
V
PBLS2024D_1
Product data sheet
Rev. 01 — 20 July 2009
© NXP B.V. 2009. All rights reserved.
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PBLS2024D pdf, datenblatt
www.DNatXaSPheSete4Um.coicmonductors
8. Test information
PBLS2024D
20 V, 1.8 A PNP BISS loadswitch
IB
90 %
10 %
IC
90 %
IBon (100 %)
input pulse
(idealized waveform)
I Boff
output pulse
(idealized waveform)
IC (100 %)
10 %
td tr
t on
Fig 18. TR1: BISS transistor switching time definition
VBB
VCC
ts
t off
t
tf
006aaa266
(probe)
oscilloscope
450
VI
RB
R2
R1
RC
Vo (probe)
oscilloscope
450
DUT
mgd624
VCC = 10 V; IC = 1 A; IBon = 50 mA; IBoff = 50 mA
Fig 19. TR1: Test circuit for switching times
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PBLS2024D_1
Product data sheet
Rev. 01 — 20 July 2009
© NXP B.V. 2009. All rights reserved.
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