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Teilenummer | PBLS2024D |
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Beschreibung | 1.8 A PNP BISS Loadswitch | |
Hersteller | NXP Semiconductors | |
Logo | ||
Gesamt 16 Seiten www.DataSheet4U.com
PBLS2024D
20 V, 1.8 A PNP BISS loadswitch
Rev. 01 — 20 July 2009
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
plastic package.
1.2 Features
I Low VCEsat (BISS) and resistor-equipped transistor in one package
I Low threshold voltage (<1 V) compared to MOSFET
I Space-saving solution
I Reduction of component count
I AEC-Q101 qualified
1.3 Applications
I Supply line switches
I Battery charger switches
I High-side switches for LEDs, drivers and backlights
I Portable equipment
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
TR1; PNP low VCEsat transistor
VCEO
collector-emitter voltage open base
IC collector current
ICM
peak collector current
single pulse;
tp ≤ 1 ms
RCEsat
collector-emitter saturation IC = −1.8 A;
resistance
IB = −100 mA
TR2; NPN resistor-equipped transistor
VCEO
IO
R1
collector-emitter voltage
output current
bias resistor 1 (input)
open base
R2/R1
bias resistor ratio
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Min Typ
--
--
--
[1] -
78
--
--
15.4 22
0.8 1
Max Unit
−20 V
−1.8 A
−3 A
117 mΩ
50 V
100 mA
28.6 kΩ
1.2
www.DNatXaSPheSete4Um.coicmonductors
PBLS2024D
20 V, 1.8 A PNP BISS loadswitch
103
Zth(j-a)
(K/W)
102
10
1
δ=1
0.50
0.20
0.05
0.01
0.75
0.33
0.10
0.02
0
006aab510
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Fig 4.
Ceramic PCB, Al2O3, standard footprint
TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
TR1; PNP low VCEsat transistor
ICBO
collector-base cut-off
current
ICES collector-emitter
cut-off current
VCB = −20 V; IE = 0 A
VCB = −20 V; IE = 0 A;
Tj = 150 °C
VEB = −16 V; VBE = 0 A
IEBO emitter-base cut-off VEB = −5 V; IC = 0 A
current
hFE
VCEsat
RCEsat
VBEsat
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
VCE = −2 V; IC = −100 mA
VCE = −2 V; IC = −500 mA
VCE = −2 V; IC = −1 A
VCE = −2 V; IC = −1.8 A
IC = −0.5 A; IB = −50 mA
IC = −1 A; IB = −50 mA
IC = −1 A; IB = −100 mA
IC = −1.8 A; IB = −100 mA
IC = −1 A; IB = −100 mA
IC = −1.8 A; IB = −100 mA
IC = −0.5 A; IB = −50 mA
IC = −1.8 A; IB = −100 mA
Min
-
-
-
-
220
[1] 220
[1] 200
[1] 160
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
Typ Max Unit
- −100 nA
- −50 µA
- −100 nA
- −100 nA
420 -
410 -
320 -
260 -
−45 −70
−85 −130
−80 −120
−140 −210
80 120
78 117
−0.85 −1
−0.93 −1.1
mV
mV
mV
mV
mΩ
mΩ
V
V
PBLS2024D_1
Product data sheet
Rev. 01 — 20 July 2009
© NXP B.V. 2009. All rights reserved.
6 of 16
6 Page www.DNatXaSPheSete4Um.coicmonductors
8. Test information
PBLS2024D
20 V, 1.8 A PNP BISS loadswitch
−IB
90 %
10 %
−IC
90 %
−IBon (100 %)
input pulse
(idealized waveform)
− I Boff
output pulse
(idealized waveform)
−IC (100 %)
10 %
td tr
t on
Fig 18. TR1: BISS transistor switching time definition
VBB
VCC
ts
t off
t
tf
006aaa266
(probe)
oscilloscope
450 Ω
VI
RB
R2
R1
RC
Vo (probe)
oscilloscope
450 Ω
DUT
mgd624
VCC = −10 V; IC = −1 A; IBon = −50 mA; IBoff = 50 mA
Fig 19. TR1: Test circuit for switching times
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PBLS2024D_1
Product data sheet
Rev. 01 — 20 July 2009
© NXP B.V. 2009. All rights reserved.
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12 Page | ||
Seiten | Gesamt 16 Seiten | |
PDF Download | [ PBLS2024D Schematic.PDF ] |
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