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PDF EIC5359-8 Data sheet ( Hoja de datos )
| Número de pieza | EIC5359-8 | |
| Descripción | Internally Matched Power FET | |
| Fabricantes | Excelics Semiconductor | |
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5.30-5.90GHz, 8W Internally Matched Power FET
EIC5359-8
• 5.30-5.90 GHz BANDWIDTH
• Input/Output Impedance Matched to 50 Ohms
• +39.5 dBm Output Power at 1dB Compression
• 10 dB Power Gain at 1dB Compression
• 33% Power Added Efficiency
• -46 dBc IM3 at Po = 28.5 dBm
• Hermetic Metal Flange Package
Excelics
EIC5359-8
YM
SN
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P1dB
G1dB
PAE
Id1dB
IM3
Output Power at 1dB Compression
f=5.30-5.90GHz, Vds=10V, Idsq=2200mA
Gain at 1dB Compression
f=5.30-5.90GHz, Vds=10V, Idsq=2200mA
Power Added Efficiency at 1dB compression
f=5.30-5.90GHz, Vds=10V, Idsq=2200mA
Drain Current at 1dB Compression
Output 3rd Order Intermodulation Distortion
f=5.90GHz, ∆f=10MHz 2-Tone Test. Pout=28.5dBm S.C.L
Idss Saturated Drain Current Vds=3V, Vgs=0V
Vp Pinch-off Voltage Vds=3V, Ids=40mA
Rth Thermal Resistance (Au-Sn Eutectic Attach)
MIN
38.5
9
-43
EIC5359-8
TYP
39.5
10
33
2200
-46
4000
-2.5
3.5
MAX
2600
4500
-4
4
UNIT
dBm
dB
%
mA
dBc
mA
V
oC/W
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION AT 25°C
SYMBOLS
PARAMETERS
CONTINUOUS1,2
Vds Drain-Source Voltage
10V
Vgs Gate-Source Voltage
-4.5V
Ids Drain Current
Idss
Igsf Forward Gate Current
80mA
Pin
Input Power
@ 3dB Compression
Tch Channel Temperature
150 oC
Tstg Storage Temperature
-65 to +150 oC
Pt Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
32W
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
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| PDF Descargar | [ Datasheet EIC5359-8.PDF ] | |
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