Datenblatt-pdf.com


EIC3135-8 Schematic ( PDF Datasheet ) - Excelics Semiconductor

Teilenummer EIC3135-8
Beschreibung Internally Matched Power FET
Hersteller Excelics Semiconductor
Logo Excelics Semiconductor Logo 




Gesamt 1 Seiten
EIC3135-8 Datasheet, Funktion
www.DataSheet4U.com
UPDATED 01/10/2005
EIC3135-8
3.10-3.50 GHz 8W Internally Matched Power FET
GATE
0.120 MIN
0.054
0.078
FEATURES
3.10-3.50 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.5 dBm Output Power at 1dB Compression
13.0 dB Power Gain at 1dB Compression
37% Power Added Efficiency
-46 dBc IM3 at Po = 28.5 dBm SCL
Hermetic Metal Flange Package
DRAIN
0.120 MIN
0.004
0.024
0.669
0.827
ALL DIMENSIONS IN INCHES
0.105
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
P1dB
G1dB
G
PAE
Id1dB
IM3
IDSS
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 3.10-3.50GHz
VDS = 10 V, IDSQ 2200mA
Gain at 1dB Compression
f = 3.10-3.50GHz
VDS = 10 V, IDSQ 2200mA
Gain Flatness
f = 3.10-3.50GHz
VDS = 10 V, IDSQ 2200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 2200mA
f = 3.10-3.50GHz
Drain Current at 1dB Compression f = 3.10-3.50GHz
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L2
VDS = 10 V, IDSQ 65% IDSS
f = 3.50GHz
Saturated Drain Current
VDS = 3 V, VGS = 0 V
MIN
38.5
12.0
-43
TYP
39.5
13.0
37
2300
MAX UNITS
dBm
dB
±0.6
dB
2800
%
mA
-46 dBc
4000 5000 mA
VP Pinch-off Voltage
VDS = 3 V, IDS = 40 mA
-2.5 -4.0
V
RTH Thermal Resistance3
3.5 4.0 oC/W
Note: 1) Tested with 100 Ohm gate resistor.
2) S.C.L. = Single Carrier Level.
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
CHARACTERISTIC
VALUE
VDS Drain to Source Voltage
10 V
VGS Gate to Source Voltage
-4.5 V
IDS Drain Current
IDSS
IGSF Forward Gate Current
80 mA
PIN Input Power
@ 3dB compression
PT Total Power Dissipation
32 W
TCH Channel Temperature
150°C
TSTG
Storage Temperature
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
-65/+150°C
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 1
Revised January 2005





SeitenGesamt 1 Seiten
PDF Download[ EIC3135-8 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
EIC3135-8Internally Matched Power FETExcelics Semiconductor
Excelics Semiconductor

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche