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PDF EIC2832-2 Data sheet ( Hoja de datos )
| Número de pieza | EIC2832-2 | |
| Descripción | Internally Matched Power FET | |
| Fabricantes | Excelics Semiconductor | |
| Logotipo |  |
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www.DataSheet4U.com
UPDATED 02/14/2006
EIC2832-2
2.80-3.20 GHz 2-Watt Internally Matched Power FET
FEATURES
• 2.80– 3.20GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +33.5 dBm Output Power at 1dB Compression
• 12.0 dB Power Gain at 1dB Compression
• 35% Power Added Efficiency
• -46 dBc IM3 at PO = 22.5 dBm SCL
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
.827±.010 .669
Excelics
EIC2832-2
.120 MIN YYWW
SN
.024
.421
.120 MIN
.168±.010
.125
.508±.008
.442
ALL DIMENSIONS IN INCHES
.004
.063
.004
.105±.008
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
PARAMETERS/TEST CONDITIONS1
SYMBOL
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression
f = 2.80-3.20GHz
VDS = 10 V, IDSQ ≈ 550mA
Gain at 1dB Compression
f = 2.80-3.20GHz
VDS = 10 V, IDSQ ≈ 550mA
Gain Flatness
f = 2.80-3.20GHz
VDS = 10 V, IDSQ ≈ 550mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 550mA
f = 2.80-3.20GHz
Id1dB
IM3
Drain Current at 1dB Compression
f = 2.80-3.20GHz
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 22.5 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 3.20GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 10 mA
Note: 1) Tested with 100 Ohm gate resistor.
2) S.C.L. = Single Carrier Level.
MIN TYP MAX UNITS
32.5 33.5
dBm
11.0 12.0
dB
±0.6 dB
35 %
600 700 mA
-43 -46
dBc
1000
1250
mA
-2.5 -4.0
V
11 12 oC/W
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Igsf Forward Gate Current
Igsr
Reserve Gate Current
Pin Input Power
Tch Channel Temperature
Tstg
Storage Temperature
Pt Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
15
-5
21.6mA
-3.6mA
32.5dBm
175 oC
-65 to +175 oC
12.5W
10V
-4V
7.2mA
-1.2mA
@ 3dB Compression
175 oC
-65 to +175 oC
12.5W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 1
Revised February 2006
1 page | ||
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| PDF Descargar | [ Datasheet EIC2832-2.PDF ] | |
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