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PDF EIC1112-8 Data sheet ( Hoja de datos )
| Número de pieza | EIC1112-8 | |
| Descripción | Internally Matched Power FET | |
| Fabricantes | Excelics Semiconductor | |
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ISSUED 07/03/2007
EIC1112-8
11.7-12.7 GHz 8-Watt Internally Matched Power FET
FEATURES
• 11.7– 12.7GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +39.5 dBm Output Power at 1dB Compression
• 6.0dB Power Gain at 1dB Compression
• 30% Power Added Efficiency
• Hermetic Metal Flange Package
0.060 MIN
0.650±0.008 0.512
GATE
Excelics
EIC1112-8
YYWW
0.060 MIN
DRAIN
0.022
0.319
0.130
0.045
0.382
2X 0.094
0.004
0.071±0.008
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOL
PARAMETERS/TEST CONDITIONS1
MIN TYP MAX
P1dB
G1dB
∆G
PAE
Id1dB
IM3
IDSS
Output Power at 1dB Compression
VDS = 10 V, IDSQ ≈ 2200mA
Gain at 1dB Compression
f = 11.7-12.7GHz
f = 11.7-12.7GHz
VDS = 10 V, IDSQ ≈ 2200mA
Gain Flatness
f = 11.7-12.7GHz
VDS = 10 V, IDSQ ≈ 2200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 2200mA
f = 11.7-12.7GHz
Drain Current at 1dB Compression
f = 11.7-12.7GHz
Output 3rd Order Intermodulation Distortion
∆f=10MHz 2-Tone Test. Pout=28.5 dBm S.C.L
Vds = 10 V, IDSQ ≈ 65% IDSS
f = 12.7GHz
Saturated Drain Current
VDS = 3 V, VGS = 0 V
38.5 39.5
56
±0.6
30
2300
2800
-40 -43
4000
5000
VP Pinch-off Voltage
RTH Thermal Resistance3
Note: 1) Tested with 100 Ohm gate resistor.
VDS = 3 V, IDS = 40 mA
-2.5 -4.0
3..5 4
2) S.C.L. = Single Carrier Level.
3) Overall Rth depends on case mounting.
UNITS
dBm
dB
dB
%
mA
dBc
mA
V
oC/W
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Igsf
Forward Gate Current
Igsr
Reserve Gate Current
Pin Input Power
Tch
Channel Temperature
Tstg
Storage Temperature
Pt Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
ABSOLUTE1
15
-5
86.4mA
-14.4mA
38.5dBm
175 oC
-65 to +175 oC
38W
CONTINUOUS2
10V
-4.5V
28.8mA
-4.8mA
@ 3dB Compression
175 oC
-65 to +175 oC
38W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised July 2007
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet EIC1112-8.PDF ] | |
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