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Número de pieza | EIC1010A-12 | |
Descripción | Internally Matched Power FET | |
Fabricantes | Excelics Semiconductor | |
Logotipo | ||
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ISSUED: 07/24/2007
EIC1010A-12
10.0-10.25 GHz 12-Watt Internally Matched Power FET
FEATURES
• 10.0-10.25GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +40.5dBm Output Power at 1dB Compression
• 7.0 dB Power Gain at 1dB Compression
• 30% Power Added Efficiency
• Hermetic Metal Flange Package
.827±.010 .669
Excelics
EIC1010A-12
.120 MIN YYWW
SN
.024
.421
.120 MIN
.168±.010
.125
.508±.008
.442
ALL DIMENSIONS IN INCHES
.004
.063
.004
.105±.008
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression
f = 10.0-10.25GHz
VDS = 9 V, IDSQ ≈ 3200mA
Gain at 1dB Compression
f = 10.0-10.25GHz
VDS = 9 V, IDSQ ≈ 3200mA
Gain Flatness
f = 10.0-10.25GHz
VDS = 9 V, IDSQ ≈ 3200mA
Power Added Efficiency at 1dB Compression
VDS = 9 V, IDSQ ≈ 3200mA
f = 10.0-10.25GHz
Id1dB
IM3
Drain Current at 1dB Compression
f = 10.0-10.25GHz
Output 3rd Order Intermodulation Distortion
∆f=10MHz 2-Tone Test. Pout=28.5 dBm S.C.L
Vds = 9 V, IDSQ ≈ 65% IDSS
f = 10.25GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 58 mA
Note: 1) Tested with 50 Ohm gate resistor.
2) S.C.L. = Single Carrier Level.
MIN
39.5
6.0
TYP
40.5
7.0
30
3300
MAX
±0.5
3700
UNITS
dBm
dB
dB
%
mA
-40 -43
dBc
5800
7200
mA
-2.5 -4.0
V
2.3 2.6 oC/W
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Igsf Forward Gate Current
Igsr
Reverse Gate Current
Pin Input Power
Tch Channel Temperature
Tstg
Storage Temperature
Pt Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
ABSOLUTE1
15
-5
130mA
-21mA
40.0dBm
175 oC
-65 to +175 oC
57W
CONTINUOUS2
10V
-4V
43mA
-7mA
@ 3dB Compression
175 oC
-65 to +175 oC
57W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised July 2007
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet EIC1010A-12.PDF ] |
Número de pieza | Descripción | Fabricantes |
EIC1010A-12 | Internally Matched Power FET | Excelics Semiconductor |
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