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Teilenummer | DB-55008L-318 |
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Beschreibung | RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs | |
Hersteller | ST Microelectronics | |
Logo | ||
Gesamt 14 Seiten www.DataSheet4U.com
DB-55008L-318
RF power amplifier using 1 x PD55008L-E
N-channel enhancement-mode lateral MOSFETs
Preliminary Data
Features
■ Excellent thermal stability
■ Frequency: 225 - 318 MHz
■ Supply voltage: 13.6 V
■ Output power: 8 W
■ Power gain: 13.5 ± 0.7 dB
■ Efficiency: 51 % - 79 %
■ BeO free amplifier
Description
The DB-55008L-318 is a common source
N-channel enhancement-mode lateral field effect
RF power amplifier designed for VHF SEISMIC
applications.
Mechanical specification:
L = 60 mm, W = 30 mm
Table 1.
Device summary
Order codes
DB-55008L-318
February 2009
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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www.st.com
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www.DataSThyepeti4cUa.cl opmerformance
Figure 6.
Harmonics vs frequency
Vdd = 13.6 V, Idq = 200 mA,
Pin = 26 dBm
( (
&REQUENCY -(Z
!-V
DB-55008L-318
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6 Page www.DataSPhaecetk4aUg.ceommechanical data
Table 8.
Dim.
Ao
Bo
Ko
PowerFLAT™ tape and reel dimensions
mm.
Min Typ Max Min
5.15 5.25 5.35 0.12
5.15 5.25 5.35 0.12
1.0 1.1 1.2 0.02
Figure 10. PowerFLAT™ tape and reel
DB-55008L-318
inch
Typ
0.13
0.13
0.02
Max
0.13
0.13
0.02
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12 Page | ||
Seiten | Gesamt 14 Seiten | |
PDF Download | [ DB-55008L-318 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
DB-55008L-318 | RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs | ST Microelectronics |
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