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DB-499D-470 Schematic ( PDF Datasheet ) - ST Microelectronics

Teilenummer DB-499D-470
Beschreibung RF power amplifier using 1 x START499D NPN RF silicon transistor
Hersteller ST Microelectronics
Logo ST Microelectronics Logo 




Gesamt 11 Seiten
DB-499D-470 Datasheet, Funktion
www.DataSheet4U.com
DB-499D-470
RF power amplifier using 1 x START499D
NPN RF silicon transistor
Preliminary Data
Features
Excellent thermal stability
Frequency: 430 - 470 MHz
Supply voltage: 3.6 V
Output power: 29 dBm
Power gain: 19 dB
Efficiency: 52 %
BeO free amplifier
Description
The DB-499D-470 is a NPN silicon RF power
amplifier designed for UHF 2-way radio
applications
Mechanical specification:
L = 60 mm, W = 30 mm
".W
Table 1.
Device summary
Order codes
DB-499D-470
February 2009
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/11
www.st.com
11






DB-499D-470 Datasheet, Funktion
www.DataSPhaecetk4aUg.ceommechanical data
5 Package mechanical data
DB-499D-470
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 6.
Dim.
A
B
B1
C
C1
D
D1
E
e
e1
H
L
SOT-89 mechanical data
mm.
Min Typ
1.4
0.44
0.36
0.35
0.35
4.4
1.62
2.29
1.42
2.92
3.94
0.89
Max
1.6
0.56
0.48
0.44
0.44
4.6
1.83
2.6
1.57
3.07
4.25
1.2
Min
55.1
17.3
14.2
13.8
13.8
173.2
63.8
90.2
55.9
115.0
155.1
35.0
Inch
Typ
Max
63.0
22.0
18.9
17.3
17.3
181.1
72.0
102.4
61.8
120.9
167.3
47.2
Figure 4. Package dimensions
6/11

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