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PDF CMT2N7002 Data sheet ( Hoja de datos )
| Número de pieza | CMT2N7002 | |
| Descripción | SMALL SIGNAL MOSFET | |
| Fabricantes | Formosa MS | |
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CMT2N7002
SMALL SIGNAL MOSFET
GENERAL DESCRIPTION
FEATURES
This N-Channel enhancement mode field effect transistor is
produced using high cell density, DMOS technology. These
products have been designed to minimize on-state
resistance while provide rugged, reliable, and fast switching
performance. It can be used in most applications requiring
up to 115mA DC and can deliver pulsed currents up to
800mA. This product is particularly suited for low voltage,
low current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
High Density Cell Design for Low RDS(ON)
Voltage Controlled Small Signal Switch
Rugged and Reliable
High Saturation Current Capability
PIN CONFIGURATION
SOT-23
Top View
3
SYMBOL
D
G
12
ORDERING INFORMATION
S
N-Channel MOSFET
Part Number
CMT2N7002
CMT2N7002G*
*Note: G : Suffix for Pb Free Product
Package
SOT-23
SOT-23
ABSOLUTE MAXIMUM RATINGS
Rating
Drain Source Voltage
Drain-Gate Voltage (RGS = 1.0MΩ)
Drain to Current Continuous
Pulsed
Gate-to-Source Voltage Continue
Non-repetitive
Total Power Dissipation
Derate above 25
Single Pulse Drain-to-Source Avalanche Energy TJ = 25
(VDD = 50V, VGS = 10V, IAS = 0.8A, L = 30mH, RG = 25Ω)
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol
VDSS
VDGR
ID
IDM
VGS
VGSM
PD
EAS
TJ, TSTG
θJA
TL
Value
60
60
±115
±800
±20
±40
225
1.8
9.6
-55 to 150
417
300
Unit
V
V
mA
V
V
mW
mW/
mJ
/W
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CMT2N7002.PDF ] | |
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