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Teilenummer | PESD12VS1UJ |
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Beschreibung | (PESD5V0S1UJ / PESD12VS1UJ) Unidirectional ESD Protection | |
Hersteller | NXP Semiconductors | |
Logo | ||
Gesamt 14 Seiten www.DataSheet4U.com
PESD5V0S1UJ; PESD12VS1UJ
Unidirectional ESD protection for transient voltage
suppression
Rev. 01 — 3 June 2009
Product data sheet
1. Product profile
1.1 General description
Unidirectional ElectroStatic Discharge (ESD) protection diodes in a very small
Surface-Mounted Device (SMD) plastic package designed to protect one signal line
from the damage caused by ESD and transient overvoltage.
Table 1. Product overview
Type number
Package
NXP
PESD5V0S1UJ
SOD323F
PESD12VS1UJ
JEITA
SC-90
Configuration
single
1.2 Features
I Transient Voltage Suppression (TVS)
protection of one line
I Max. peak pulse power: PPP = 890 W
I Low clamping voltage: VCL = 19 V
I Low leakage current: IRM = 300 nA
I ESD protection up to 30 kV
I IEC 61000-4-2; level 4 (ESD)
I IEC 61000-4-5 (surge); IPP = 47 A
I AEC-Q101 qualified
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Cellular handsets and accessories
I Communication systems
I Portable electronics
I Medical and industrial equipment
1.4 Quick reference data
Table 2. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VRWM
reverse standoff voltage
PESD5V0S1UJ
PESD12VS1UJ
Cd diode capacitance
PESD5V0S1UJ
f = 1 MHz; VR = 0 V
PESD12VS1UJ
Min Typ Max Unit
- - 5V
- - 12 V
- 480 530 pF
- 160 180 pF
www.DNatXaSPheSete4Um.coicmonductors
PESD5V0S1UJ; PESD12VS1UJ
Unidirectional ESD protection for transient voltage suppression
104
PPP
(W)
103
102
(1)
(2)
006aab414
1.2
PPP
PPP(25°C)
0.8
0.4
001aaa193
101
101 102 103 104
tp (µs)
0
0 50 100 150 200
Tj (°C)
Tamb = 25 °C
(1) PESD5V0S1UJ
(2) PESD12VS1UJ
Fig 3. Peak pulse power as a function of exponential
pulse duration; typical values
Fig 4.
Relative variation of peak pulse power as a
function of junction temperature; typical
values
500
Cd
(pF)
400
006aab415
103
IRM
(nA)
102
006aab416
(1)
300
(1)
200
10
(2)
100 (2)
1
0
0 4 8 12
VR (V)
f = 1 MHz; Tamb = 25 °C
(1) PESD5V0S1UJ
(2) PESD12VS1UJ
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
10−1
−75
−25
25
(1) PESD5V0S1UJ
(2) PESD12VS1UJ
75 125 175
Tamb (°C)
Fig 6. Reverse leakage current as a function of
ambient temperature; typical values
PESD5V0S1UJ_PESD12VS1UJ_1
Product data sheet
Rev. 01 — 3 June 2009
© NXP B.V. 2009. All rights reserved.
6 of 14
6 Page www.DNatXaSPheSete4Um.coicmonductors
PESD5V0S1UJ; PESD12VS1UJ
Unidirectional ESD protection for transient voltage suppression
13. Revision history
Table 12. Revision history
Document ID
Release date
PESD5V0S1UJ_PESD12VS1UJ_1 20090603
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PESD5V0S1UJ_PESD12VS1UJ_1
Product data sheet
Rev. 01 — 3 June 2009
© NXP B.V. 2009. All rights reserved.
12 of 14
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Seiten | Gesamt 14 Seiten | |
PDF Download | [ PESD12VS1UJ Schematic.PDF ] |
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