PESD5V0S1UJ Datasheet PDF - NXP Semiconductors
| Part Number | PESD5V0S1UJ | |
| Description | (PESD5V0S1UJ / PESD12VS1UJ) Unidirectional ESD Protection | |
| Manufacturers | NXP Semiconductors | |
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PESD5V0S1UJ; PESD12VS1UJ
Unidirectional ESD protection for transient voltage
suppression
Rev. 01 — 3 June 2009
Product data sheet
1. Product profile
1.1 General description
Unidirectional ElectroStatic Discharge (ESD) protection diodes in a very small
Surface-Mounted Device (SMD) plastic package designed to protect one signal line
from the damage caused by ESD and transient overvoltage.
Table 1. Product overview
Type number
Package
NXP
PESD5V0S1UJ
SOD323F
PESD12VS1UJ
JEITA
SC-90
Configuration
single
1.2 Features
I Transient Voltage Suppression (TVS)
protection of one line
I Max. peak pulse power: PPP = 890 W
I Low clamping voltage: VCL = 19 V
I Low leakage current: IRM = 300 nA
I ESD protection up to 30 kV
I IEC 61000-4-2; level 4 (ESD)
I IEC 61000-4-5 (surge); IPP = 47 A
I AEC-Q101 qualified
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Cellular handsets and accessories
I Communication systems
I Portable electronics
I Medical and industrial equipment
1.4 Quick reference data
Table 2. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VRWM
reverse standoff voltage
PESD5V0S1UJ
PESD12VS1UJ
Cd diode capacitance
PESD5V0S1UJ
f = 1 MHz; VR = 0 V
PESD12VS1UJ
Min Typ Max Unit
- - 5V
- - 12 V
- 480 530 pF
- 160 180 pF
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www.DNatXaSPheSete4Um.coicmonductors
PESD5V0S1UJ; PESD12VS1UJ
Unidirectional ESD protection for transient voltage suppression
7. Characteristics
Table 10. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VRWM
reverse standoff voltage
PESD5V0S1UJ
PESD12VS1UJ
IRM reverse leakage current
PESD5V0S1UJ
VRWM = 5 V
PESD12VS1UJ
VRWM = 12 V
VBR breakdown voltage
IR = 5 mA
PESD5V0S1UJ
PESD12VS1UJ
Cd diode capacitance
PESD5V0S1UJ
f = 1 MHz;
VR = 0 V
PESD12VS1UJ
VCL clamping voltage
PESD5V0S1UJ
IPP = 47 A
IPP = 25 A
IPP = 5 A
PESD12VS1UJ
IPP = 22.5 A
IPP = 15 A
IPP = 5 A
rdif
differential resistance
IR = 5 mA
PESD5V0S1UJ
PESD12VS1UJ
Min Typ Max Unit
- - 5V
- - 12 V
-
0.3 4
µA
- < 1 100 nA
6.2 6.8 7.3 V
13.3 14.5 15.75 V
- 480 530 pF
- 160 180 pF
[1]
- - 19 V
- - 13.5 V
- - 9.8 V
- - 27 V
- - 23.5 V
- - 19 V
- 2 100 Ω
- 5 100 Ω
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
PESD5V0S1UJ_PESD12VS1UJ_1
Product data sheet
Rev. 01 — 3 June 2009
© NXP B.V. 2009. All rights reserved.
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