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PDF GT35J321 Data sheet ( Hoja de datos )
| Número de pieza | GT35J321 | |
| Descripción | Fourth Generation IGBT | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de GT35J321 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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GT35J321
www.DataSheet4TUO.cSoHmIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT35J321
Fourth-generation IGBT
Current Resonance Inverter Switching Applications
Unit: mm
z Enhancement mode
z High speed: tf = 0.19 μs (typ.) (IC = 50 A)
z Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50 A)
z FRD included between emitter and collector
z Toshiba package name: TO-3P(N)IS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector−emitter voltage
Gate−emitter voltage
@ Tc = 100°C
Collector current (DC)
@ Tc = 25°C
Collector current (pulse)
Diode forward current
DC
Pulse
Collector power
dissipation
@ Tc = 100°C
@ Tc = 25°C
Junction temperature
Storage temperature range
VCES
VGES
IC
ICP
IF
IFP
PC
Tj
Tstg
600
±25
18
37
100
20
40
30
75
150
−55 to 150
V
V
A
A
A
W
°C
°C
1. GATE
2. COLLECTOR
3. EMITTER
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-16F1A
Weight: 5.8 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Equivalent Circuit
Symbol
Rth (j-c)
Rth (j-c)
Max Unit
1.67 °C/W
3.2 °C/W
Marking
Gate
Collector
Emitter
TOSHIBA
GT35J321
1
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2008-03-26
1 page  
www.DataSheet4U.com
ICmax – Tc
50
Common emitter
VGE = 15 V
40
30
20
10
0
25 50 75 100 125 150
Case temperature Tc (°C)
GT35J321
rth (t) – tw
102
Tc = 25°C
101
Diode stage
100
IGBT stage
10−1
10−2
10−3
10−5
10−4
10−3
10−2
10−1
100
101
102
Pulse width tw (s)
50
Common emitter
VGE = 0 V
40
IF – VF
30
20
25
10 Tc = 125°C
−40
0
0 0.4 0.8 1.2 1.6 2.0
Forward voltage VF (V)
Irr, trr – IF
50 500
30 300
10
trr
5
3 Irr
1
0
100
50
30
Common emitter
di/dt = −100 A/μs
VGE = 0 V
Tc = 25°C
10
4 8 12 16 20
Forward current IF (A)
300
100
50
30
10
5
3
11
Cj – VR
f = 1 MHz
Tc = 25°C
3 5 10
30 50 100
Reverse voltage VR (V)
300 500
Irr, trr – di/dt
200 10
trr
8
Common collector
IF = 15 A
Tc = 25°C
6
100
4
Irr
2
00
0 40 80 120 160 200
di/dt (A/μs)
5 2008-03-26
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet GT35J321.PDF ] | |
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