(PDF) AP4957M Datasheet - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Número de pieza	AP4957M
Descripción	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes	Advanced Power Electronics
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No Preview Available ! www.DataSheet4U.com Advanced Power Electronics Corp. AP4957M P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance ▼ Simple Drive Requirement ▼ Dual P MOSFET Package D2 D2 D1 D1 Description SO-8 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G2 S2 G1 S1 G1 BVDSS RDS(ON) ID D1 G2 S1 -30V 24mΩ -7.7A D2 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating -30 ±20 -7.7 -6.1 -30 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Max. Value 62.5 Unit ℃/W Data and specifications subject to change without notice 200420041 1 page

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PDF AP4957M Data sheet ( Hoja de datos )