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PDF PMEG3010BER Data sheet ( Hoja de datos )
| Número de pieza | PMEG3010BER | |
| Descripción | 1A Low Vf MEGA Schottky Barrier Rectifier | |
| Fabricantes | NXP Semiconductors | |
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PMEG3010BER
1 A low VF MEGA Schottky barrier rectifier
Rev. 01 — 20 April 2009
Product data sheet
www.datasheet4u.com
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD123W small and flat
lead Surface-Mounted Device (SMD) plastic package.
1.2 Features
I Average forward current: IF(AV) ≤ 1 A
I Reverse voltage: VR ≤ 30 V
I Low forward voltage
I High power capability due to clip-bond technology
I AEC-Q101 qualified
I Small and flat lead SMD plastic package
1.3 Applications
I Low voltage rectification
I High efficiency DC-to-DC conversion
I Switch Mode Power Supply (SMPS)
I Reverse polarity protection
I Low power consumption applications
1.4 Quick reference data
Table 1. Quick reference data
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
IF(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
Tamb ≤ 120 °C [1] - - 1
Tsp ≤ 140 °C
--1
VR reverse voltage
- - 30
VF forward voltage
IR reverse current
IF = 1 A
VR = 30 V
- 405 450
- 15 50
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
Unit
A
A
V
mV
µA
1 page  
NXP Semiconductors
PMEG3010BER
1 A low VF MEGA Schottky barrier rectifier
www.datashe1e0t34u.com
Zth(j-a)
(K/W) duty cycle =
102
1
0.75
0.5
0.25 0.33
10 0.2
0.1
0.05
0.02 0.01
10
006aab364
10−1
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VF
forward voltage
IF = 0.1 A
IF = 0.7 A
IF = 1 A
IR
reverse current
VR = 5 V
VR = 10 V
VR = 30 V
Cd diode capacitance f = 1 MHz
VR = 1 V
VR = 10 V
Min Typ Max Unit
- 315 360 mV
- 390 430 mV
- 405 450 mV
- 2 - µA
- 3 - µA
- 15 50 µA
- 170 - pF
- 60 - pF
PMEG3010BER_1
Product data sheet
Rev. 01 — 20 April 2009
© NXP B.V. 2009. All rights reserved.
5 of 13
5 Page 
NXP Semiconductors
12. Revision history
www.datasheet4u.com
Table 9. Revision history
Document ID
Release date
PMEG3010BER_1
20090420
Data sheet status
Product data sheet
PMEG3010BER
1 A low VF MEGA Schottky barrier rectifier
Change notice
-
Supersedes
-
PMEG3010BER_1
Product data sheet
Rev. 01 — 20 April 2009
© NXP B.V. 2009. All rights reserved.
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