(PDF) GT40Q322 Datasheet - Voltage Resonance Inverter Switching Application

Número de pieza	GT40Q322
Descripción	Voltage Resonance Inverter Switching Application
Fabricantes	Toshiba Semiconductor
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No Preview Available ! GT40Q322 TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT Preliminary GT40Q322 Voltage Resonance Inverter Switching Application www.datasheet4u.com • Enhancement-mode • High speed : tf = 0.14 µs (typ.) (IC = 40A) • FRD included between emitter and collector • The 4th generation • TO-3P(N) (Toshiba package name) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current @ Tc = 100°C @ Tc = 25°C Pulsed collector current DC Diode forward current Pulsed Collector power dissipation @ Tc = 100°C @ Tc = 25°C Junction temperature Storage temperature range Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1200 ±25 20 39 80 10 80 80 200 150 −55 to 150 Unit V V A A A W W °C °C JEDEC ― JEITA ― TOSHIBA 2-16C1C Weight: 4.6 g (typ.) Thermal Characteristics Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 0.625 1.79 Unit °C/W °C/W Equivalent Circuit Collector Gate Emitter 1 2003-07-07 1 page

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PDF GT40Q322 Data sheet ( Hoja de datos )