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PDF APTGT200SK60TG Data sheet ( Hoja de datos )
| Número de pieza | APTGT200SK60TG | |
| Descripción | Buck chopper Trench Field Stop IGBT Power Module | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de APTGT200SK60TG (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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APTGT200SK60TG
Buck chopper
Trench + Field Stop IGBT®
www.datasheet4u.com Power Module
V BUS
NT C2
Q1
G1
E1
OUT
0/VBU S SENSE
0/VBU S
NT C1
VBUS
E1
G1
0/ VB US
SENSE
0/ VB US
0/ VB US
SENSE
OUT
OUT
NTC2
NTC1
VCES = 600V
IC = 200A @ Tc = 80°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 150°C
Max ratings
600
290
200
400
±20
625
400A @ 550V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-6
1 page  
APTGT200SK60TG
www.datasheet4u.com
Operating Frequency vs Collector Current
120
100 ZVS
ZCS
80
VCE= 300V
D=50%
RG=2Ω
TJ =150°C
Tc=85°C
60
40
20
Hard
switching
0
0 50 100 150 200 250
IC (A)
400
350
300
250
200
150
100
50
0
0
Forward Characteristic of diode
TJ =125°C
TJ=150°C
TJ =25°C
0.4 0.8 1.2 1.6
VF (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.45
0.4 0.9
Diode
0.35
0.3 0.7
0.25 0.5
0.2
0.15 0.3
0.1 0.1
0.05 0.05
0
Single Pulse
0.00001
0.0001
0. 001
0.01
0.1
1
Rectangular Pulse Duration in Seconds
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
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5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APTGT200SK60TG.PDF ] | |
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