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Número de pieza | APTGT200DU60T | |
Descripción | Dual common source Trench Field Stop IGBT Power Module | |
Fabricantes | Advanced Power Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APTGT200DU60T (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! APTGT200DU60T
Dual common source
Trench + Field Stop IGBT®
www.datasheet4u.com Power Module
VCES = 600V
IC = 200A @ Tc = 80°C
G1
E1
NTC1
C1
Q1
C2
Q2
E
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
G2
Features
E2
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
NTC2 - Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
• Internal thermistor for temperature monitoring
G2
E2
C1 E
C2
C2
E1 E2 NTC2
G1 G2 NTC1
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 150°C
Max ratings
600
290
200
400
±20
625
400A @ 550V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5
1 page APTGT200DU60T
www.datasheet4u.com
Operating Frequency vs Collector Current
120
VCE= 300V
100
ZCS
D=50%
RG=5Ω
80 TJ=150°C
ZVS
Tc=85°C
60
40 Hard
20 switching
0
0 50 100 150 200 250
IC (A)
400
350
300
250
200
150
100
50
0
0
Forward Characteristic of diode
TJ= 125°C
TJ =150°C
TJ=25°C
0.4 0.8 1.2 1.6
VF (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.45
0.4 0.9
Diode
0.35
0.3 0.7
0.25 0.5
0.2
0.15 0.3
0.1 0.1
0.05 0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
1
Rectangular Pulse Duration in Seconds
10
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
5-5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet APTGT200DU60T.PDF ] |
Número de pieza | Descripción | Fabricantes |
APTGT200DU60T | Dual common source Trench Field Stop IGBT Power Module | Advanced Power Technology |
APTGT200DU60TG | Dual common source Trench Field Stop IGBT Power Module | Microsemi Corporation |
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