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PDF APTGT200DA120G Data sheet ( Hoja de datos )
| Número de pieza | APTGT200DA120G | |
| Descripción | Boost chopper Fast Trench Field Stop IGBT Power Module | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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APTGT200DA120G
Boost chopper
Fast Trench + Field Stop IGBT®
www.datasheet4u.com Power Module
VCES = 1200V
IC = 200A @ Tc = 80°C
VBUS
CR1
OUT
Q2
G2
E2
0/VBUS
VBUS
E2
G2
0/VBUS
OUT
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
• Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1200
280
200
400
±20
890
400A @ 1100V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
1 page  
APTGT200DA120G
www.datasheet4u.com
Operating Frequency vs Collector Current
60
50
ZVS
40
30 ZCS
VCE=600V
D= 50%
RG=2.7Ω
TJ=125°C
Tc=75°C
20
10 Hard
switching
0
0 40
80
120 160 200 240 280
IC (A)
400
350
300
250
200
150
100
50
0
0
Forward Characteristic of diode
TJ=25°C
TJ=125°C
TJ =125°C
0.4 0.8 1.2 1.6 2 2.4
VF (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.3
0.25 0.9
0.2 0.7
0.15 0.5
0.1 0.3
Diode
0.05 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet APTGT200DA120G.PDF ] | |
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