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PDF PBSS4350SPN Data sheet ( Hoja de datos )
| Número de pieza | PBSS4350SPN | |
| Descripción | 2.7A NPN/PNP Low VCEsat (BISS) Transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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PBSS4350SPN
50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor
Rev. 01 — 5 April 2007
Product data sheet
www.datasheet4u.com
1. Product profile
1.1 General description
NPN/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium
power Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number Package
NXP
PBSS4350SPN SOT96-1
Name
SO8
NPN/NPN
complement
PBSS4350SS
PNP/PNP
complement
PBSS5350SS
1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I Complementary MOSFET driver
I Half and full bridge motor drivers
I Dual low power switches (e.g. motors, fans)
I Automotive
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
TR1; NPN low VCEsat transistor
VCEO collector-emitter voltage
IC collector current
ICM peak collector current
RCEsat collector-emitter
saturation resistance
Conditions
open base
single pulse;
tp ≤ 1 ms
IC = 2 A;
IB = 200 mA
Min Typ Max
Unit
- - 50 V
- - 2.7 A
--5
A
[1] -
90 130 mΩ
1 page  
NXP Semiconductors
PBSS4350SPN
50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor
6. Thermal characteristics
www.datasheet4u.com
Table 7. Thermal characteristics
Symbol Parameter
Per transistor
Rth(j-a)
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
Per device
Rth(j-a)
thermal resistance from
junction to ambient
Conditions
in free air
Min Typ Max Unit
[1] - - 227 K/W
[2] - - 144 K/W
[3] - - 87 K/W
- - 40 K/W
in free air
[1] - - 167 K/W
[2] - - 104 K/W
[3] - - 63 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
103
Zth(j-a)
(K/W)
duty cycle =
102
10
1
1.0
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aaa809
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSS4350SPN_1
Product data sheet
Rev. 01 — 5 April 2007
© NXP B.V. 2007. All rights reserved.
5 of 19
5 Page 
NXP Semiconductors
PBSS4350SPN
50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor
www.datashee6t040u.com
hFE
(1)
400
(2)
200 (3)
006aaa977
0
−10−1
−1
−10
−102
−103
−104
IC (mA)
VCE = −2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 13. TR2 (PNP): DC current gain as a function of
collector current; typical values
−1.2
VBE
(V)
−0.8
(1)
006aaa979
(2)
−0.4
(3)
−5
IC
(A)
−4
−3
IB (mA) = −140
−126
−112
−98
−84
−70
−56
−2
006aaa978
−42
−28
−14
−1
0
0
−0.4
−0.8
−1.2
−1.6
−2.0
VCE (V)
Tamb = 25 °C
Fig 14. TR2 (PNP): Collector current as a function of
collector-emitter voltage; typical values
−1.4
VBEsat
(V)
−1.0
006aaa980
−0.6
(1)
(2)
(3)
0
−10−1
−1
−10
−102
−103
−104
IC (mA)
VCE = −2 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 15. TR2 (PNP): Base-emitter voltage as a function
of collector current; typical values
−0.2
−10−1
−1
−10
−102
−103
−104
IC (mA)
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 16. TR2 (PNP): Base-emitter saturation voltage as a
function of collector current; typical values
PBSS4350SPN_1
Product data sheet
Rev. 01 — 5 April 2007
© NXP B.V. 2007. All rights reserved.
11 of 19
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