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PDF WF5027 Data sheet ( Hoja de datos )

Número de pieza WF5027
Descripción Crystal Oscillator Module ICs
Fabricantes Nippon Precision Circuits 
Logotipo Nippon Precision Circuits Logotipo



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No Preview Available ! WF5027 Hoja de datos, Descripción, Manual

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WF5027 series
Crystal Oscillator Module ICs
OVERVIEW
The WF5027 series are miniature crystal oscillator module ICs. The oscillator circuit stage has voltage regula-
tor drive, significantly reducing current consumption and crystal current, compared with existing devices, and
significantly reducing the oscillator characteristics supply voltage dependency. There are 3 pad layout package
options available for optimized mounting, making these devices ideal for miniature crystal oscillators.
FEATURES
I Wide range of operating supply voltage: 1.60 to 3.63V
I Regulated voltage drive oscillator circuit for reduced
power consumption and crystal drive current
I Optimized low crystal drive current oscillation for
miniature crystal units
I 3 pad layout options for mounting
• 5027A×, M×, Q× series: for Flip Chip Bonding
• 5027B×, N×, R× series: for Wire Bonding (type I)
• 5027C×, P×, S× series: for Wire Bonding (type II)
I Recommended oscillation frequency range
For fundamental oscillator
• Low frequency version: 20MHz to 60MHz
• High frequency version: 60MHz to 100MHz
For 3rd overtone oscillator
• Low frequency version: 40MHz to 110MHz
• High frequency version*1: 110MHz to 180MHz
*1: under development
I Multi-stage frequency divider for low-frequency
output support: 0.9MHz (min)
I Frequency divider built-in (for fundamental oscil-
lator)
• Selectable by version: fO, fO/2, fO/4, fO/8, fO/16,
fO/32, fO/64
I 40 to 85°C operating temperature range
I Standby function
• High impedance in standby mode, oscillator
stops
I CMOS output duty level (1/2VDD)
I 50 ± 5% output duty
I 15pF output drive capability
I Wafer form (WF5027××)
Chip form (CF5027××)
APPLICATIONS
I 3.2 × 2.5, 2.5 × 2.0, 2.0 × 1.6 size miniature crystal oscillator modules
ORDERING INFORMATION
Device
WF5027××–4
CF5027××–4
Package
Wafer form
Chip form
SEIKO NPC CORPORATION —1

1 page




WF5027 pdf
WF5027 series
Table 1. Version and trimming fuses
(for fundamental oscillator)
www.datasheet4Vue.rcsoiomn
Trimming fuse number*1
F1 F2 F3 F4
5027×1 – – – –
5027×2 × – – –
5027×3 – × – –
5027×4 × × – –
5027×5 – – ×
5027×6 × ×
5027×7 – × ×
5027×P – – – ×
5027×Q × – – ×
5027×R – × ×
5027×S × × ×
5027×T – – × ×
5027×V × × ×
5027×W – × × ×
*1. –: untrimmed, ×: trimmed, F6 to F9 not used
F5
×
×
×
×
×
×
×
I 5027×1 trimming fuses (untrimmed)
I 5027×2 trimming fuses (F1 link trimmed)
I 5027×3 trimming fuses (F2 link trimmed)
I 5027×4 trimming fuses (F1 and F2 links trimmed)
: trimmed device
Table 2. Version and trimming fuses (for 3rd overtone oscillator)
Version
Recommended oscillation
frequency range*1 [MHz]
F1
F2
Trimming fuse number*2
F3 F4 F5 F6 F7
F8
F9
5027×A
40 to 50
– – – – – – ×××
5027×B
50 to 65
×– – – – – ××
5027×C
65 to 85
××– – ×××
5027×D
85 to 110
××××××
5027×E
5027×F
(110 to 145)
(145 to 180)
TBD
*1. Values in parentheses ( ) are provisional only.
*2. –: untrimmed, ×: trimmed
SEIKO NPC CORPORATION —5

5 Page





WF5027 arduino
WF5027 series
For 3rd Overtone Oscillator (5027×A to 5027×D)
VDD = 1.60 to 3.63V, VSS = 0V, Ta = 40 to +85°C unless otherwise noted.
www.datasheet4u.coPmarameter
Symbol
Condition
Rating
min typ max
Unit
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
Output leakage current
Current consumption*1
Standby current
INHN pull-up resistance
Oscillator feedback
resistance
Q: Measurement cct 3, IOH = – 8mA,
VDD = 2.25 to 3.63V
VOH Q: Measurement cct 3, IOH = – 4mA,
VDD = 1.60 to 2.25V
VDD – 0.4
VDD – 0.4
Q: Measurement cct 3, IOL = 8mA,
VDD = 2.25 to 3.63V
VOL Q: Measurement cct 3, IOL = 4mA,
VDD = 1.60 to 2.25V
VIH INHN, Measurement cct 4
0.7VDD
VIL INHN, Measurement cct 4
IZ
Q: Measurement cct 5,
INHN = LOW
VOH = VDD
VOL = VSS
– 10
5027×A, Measurement cct 1,
no load, INHN = open, fO = 48MHz
VDD = 3.3V
VDD = 2.5V
VDD = 1.8V
VDD = 3.3V
5027×B, Measurement cct 1,
no load, INHN = open, fO = 54MHz
VDD = 2.5V
IDD VDD = 1.8V
VDD = 3.3V
5027×C, Measurement cct 1,
no load, INHN = open, fO = 85MHz
VDD = 2.5V
VDD = 1.8V
5027×D, Measurement cct 1,
no load, INHN = open, fO = 100MHz
VDD = 3.3V
VDD = 2.5V
VDD = 1.8V
IST Measurement cct 1, INHN = LOW
RUP1
Measurement cct 6
RUP2
0.4
30
5027×A
2.6
5027×B
Rf 5027×C
2.2
1.9
5027×D
1.9
3.6
3.0
2.6
3.8
3.2
2.8
4.8
4.0
3.4
5.3
4.4
3.6
1.5
70
3.8
3.2
2.8
2.8
0.4
0.4
0.3VDD
10
5.4
4.5
3.9
5.7
4.8
4.2
7.2
6.0
5.1
8.0
6.6
5.4
10
8
150
5.0
4.2
3.7
3.7
V
V
V
V
V
V
µA
µA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
M
k
k
k
k
k
5027×A
9.6 12 14.4 pF
Design value (a monitor pattern on a 5027×B 6.4 8 9.6 pF
CG wafer is tested),
Excluding parasitic capacitance.
5027×C
4.8
6
7.2 pF
Oscillator capacitance
5027×D
5027×A
1.6 2 2.4 pF
9.6 12 14.4 pF
Design value (a monitor pattern on a 5027×B
9.6 12 14.4 pF
CD wafer is tested),
Excluding parasitic capacitance.
5027×C
6.4
8
9.6 pF
5027×D 4.8 6 7.2 pF
*1. The consumption current IDD (CL) with a load capacitance (CL) connected to the Q pin is given by the following equation, where IDD is the no-load con-
sumption current and fOUT is the output frequency.
IDD (CL) [mA] = IDD [mA] + CL [pF] × VDD [V] × fOUT [MHz] × 10–3
SEIKO NPC CORPORATION —11

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