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PDF AOU436 Data sheet ( Hoja de datos )
| Número de pieza | AOU436 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOU436
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOU436 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AOU436 is Pb-free
(meets ROHS & Sony 259 specifications). AOU436L
is a Green Product ordering option. AOU436 and
AOU436L are electrically identical.
VDS (V) = 30V
ID = 57A (VGS = 10V)
RDS(ON) < 8.5mΩ (VGS = 10V)
RDS(ON) < 14mΩ (VGS = 4.5V)
TO-251
D
Top View
Drain Connected
to Tab
G
S
G DS
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current B,
TC=25°C
TC=100°C B
ID
Pulsed Drain Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
57
40
100
30
143
50
25
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
100
2
Max
125
3
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
1 page  
AOU436
TwYwwP.IDCaAtaLShEeLetE4UC.TcoRmICAL AND THERMAL CHARACTERISTICS
60 80
50
tA
=
L ⋅ ID
BV − VDD
60
40
30 40
20
10 TA=25°C
20
0
0.00001
0.0001
0.001
0.01
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
80
60
40
20
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AOU436.PDF ] | |
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