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G50N60HS Schematic ( PDF Datasheet ) - Infineon

Teilenummer G50N60HS
Beschreibung SGW50N60HS
Hersteller Infineon
Logo Infineon Logo 




Gesamt 11 Seiten
G50N60HS Datasheet, Funktion
SGW50N60HS
www.DataSheet4U.com
High Speed IGBT in NPT-technology
30% lower Eoff compared to previous generation
Short circuit withstand time – 10 µs
Designed for operation above 30 kHz
NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
High ruggedness, temperature stable behaviour
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3-21
Type
VCE
IC Eoff25 Tj
Marking
Package
SGW50N60HS
600V 50A 0.88mJ 150°C G50N60HS PG-TO-247-3-21
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 600V, Tj 150°C
Avalanche energy single pulse
IC = 50A, VCC=50V, RGE=25
start TJ=25°C
Gate-emitter voltage static
transient (tp<1µs, D<0.05)
Short circuit withstand time2)
VGE = 15V, VCC 600V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Time limited operating junction temperature for t < 150h
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
EAS
VGE
tSC
Ptot
Tj ,
Tstg
Tj(tl)
-
600
100
50
150
150
280
±20
±30
10
416
-55...+150
175
260
Unit
V
A
mJ
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.1 June 06






G50N60HS Datasheet, Funktion
www.DataSheet4U.com
td(off)
100ns
tf
td(on)
tr
10ns
0A
20A 40A 60A 80A
Figure 9.
IC, COLLECTOR CURRENT
Typical switching times as a
function of collector current
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, RG=6.8,
Dynamic test circuit in Figure E)
SGW50N60HS
100 ns
td(off)
td(on)
tf tr
10 ns
0Ω 3Ω 6Ω 9Ω 12Ω 15Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, IC=50A,
Dynamic test circuit in Figure E)
td(off)
100ns
td(on)
tr
tf
10ns
25°C
50°C
75°C 100°C 125°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=400V,
VGE=0/15V, IC=50A, RG=6.8,
Dynamic test circuit in Figure E)
5,5V
5,0V
4,5V
4,0V
3,5V
3,0V
max.
2,5V
2,0V
typ.
1,5V
min.
1,0V
-50°C 0°C 50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 1mA)
Power Semiconductors
6
Rev. 2.1 June 06

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