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Teilenummer | RMWP26001 |
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Beschreibung | 26 GHZ Power Amp | |
Hersteller | Fairchild Semiconductor | |
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Gesamt 8 Seiten www.DataSheet4U.com
June 2004
RMWP26001
24–26.5 GHz Power Amplifier MMIC
General Description
The RMWP26001 is a 4-stage GaAs MMIC amplifier
designed as a 24 to 26.5 GHz Power Amplifier for use in
point to point and point to multi-point radios, and various
communications applications. In conjunction with other
Fairchild Semiconductor amplifiers, multipliers and mixers
it forms part of a complete 26 GHz transmit/receive chipset.
The RMWP26001 utilizes our 0.25µm power PHEMT
process and is sufficiently versatile to serve in a variety of
power amplifier applications.
Features
• 4mil substrate
• Small-signal gain 23dB (typ.)
• 1dB compressed Pout 24dBm (typ.)
• Chip size 2.85mm x 1.2mm
Device
Absolute Ratings
Symbol
Vd
Vg
Vdg
ID
PIN
TC
TSTG
RJC
Parameter
Positive DC Voltage (+4V Typical)
Negative DC Voltage
Simultaneous (Vd–Vg)
Positive DC Current
RF Input Power (from 50Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance (Channel to Backside)
Ratings
+6
-2
8
531
+8
-30 to +85
-55 to +125
41.5
Units
V
V
V
mA
dBm
°C
°C
°C/W
©2004 Fairchild Semiconductor Corporation
RMWP26001 Rev. C
www.DataTSyhepeit4cUa.cloCm haracteristics
RMWP26001, 26 GHz Power Amplifier, Typical Performance,
On-Wafer Measurements, Vd = 4V, Idq = 370mA
26
24
S21
22
20
18
S22
16
S11
14
12
10
18 20 22 24 26 28
FREQUENCY (GHz)
0
-2
-4
-6
-8
-10
-12
-14
-16
30
40
30
20
10
0
-10
-20
-30
-40
0
RMWP26001, 26 GHz Power Amplifier, Typical Performance,
Vd = 4V, Idq = 370mA, Chip Bonded into 50Ω Test Fixture
S21
S22
S11
10 20 30
FREQUENCY (GHz)
20
15
10
5
0
-5
-10
-15
-20
40
©2004 Fairchild Semiconductor Corporation
RMWP26001 Rev. C
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ RMWP26001 Schematic.PDF ] |
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