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PDF RMWB33001 Data sheet ( Hoja de datos )
| Número de pieza | RMWB33001 | |
| Descripción | 33 GHZ Buffer Amp | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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www.DataSheet4U.com
June 2004
RMWB33001
33 GHz Buffer Amplifier MMIC
General Description
The RMWB33001 is a 4-stage GaAs MMIC amplifier
designed as a 33 GHz Buffer Amplifier for use in point to
point and point to multi-point radios, and various communi-
cations applications. In conjunction with other Fairchild RF
amplifiers, multipliers and mixers it forms part of a complete
38 GHz transmit/receive chipset. The RMWB33001 utilizes
our 0.25µm power PHEMT process and is sufficiently
versatile to serve in a variety of medium power amplifier
applications.
Features
• 4 mil Substrate
• Small-signal Gain 24dB (typ.)
• Saturated Power Out 19dBm (typ.)
• Voltage Detector Included to Monitor Pout
• Chip size 3.2mm x 1.2mm
Device
Absolute Ratings
Symbol
Vd
Vg
Vdg
ID
PIN
TC
TSTG
RJC
Parameter
Positive DC Voltage (+4V Typical)
Negative DC Voltage
Simultaneous (Vd–Vg)
Positive DC Current
RF Input Power (from 50Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance (Channel to Backside)
Ratings
+6
-2
8
173
+8
-30 to +85
-55 to +125
130
Units
V
V
V
mA
dBm
°C
°C
°C/W
©2004 Fairchild Semiconductor Corporation
RMWB33001 Rev. C
1 page  
www.DataPSeherefto4Ur.mcomance Data
RMWB33001 33 GHz BA, Typical Small Signal Performance
50Ω Fixture Measurements, Vd=4 V, Idq = 112 mA, T=25°C
26 0
S21
24 -5
S11
22
-10
20 -15
18 -20
S22
16 -25
30 31 32 33 34 35 36 37
Frequency (GHz)
RMWB33001 33 GHz BA, Power Output and Gain vs. Power In
50Ω Fixture Measurements, Vd=4 V, Idq = 112 mA, T=25°C
20 26
19 25
18 24
17 23
16
15 32 GHz
33 GHz
14 34 GHz
13 35 GHz
12
22
21
20
19
18
11 17
10
-12
-10
-8 -6
Pin (dBm)
-4
-2
16
0
RMWB33001 33 GHz BA, Typical Small Signal Performance
50Ω Fixture Measurements, Vd=4 V, Idq = 112 mA, T=25°C
30 0
25 -5
20
S11
15
10
S21
5
S22
-10
-15
-20
-25
0 -30
0 5 10 15 20 25 30 35 40
Frequency (GHz)
RMWB33001 33 GHz BA, Power Output and Gain at 3 dB
Compression vs. Frequency and Temperature,
50Ω FixtureMeasurements, Vd=4 V, Idq = 112 mA
22
21 G3dB (T=25°C)
20
19 P3dB (T=25°C)
18
P3dB (T=75°C)
17
16 G3dB (T=75°C)
15
14
13
31
32 33
34
Frequency (GHz)
35
36
©2004 Fairchild Semiconductor Corporation
RMWB33001 Rev. C
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet RMWB33001.PDF ] | |
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