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8N60 Schematic ( Datenblatt PDF ) - Inchange

Teilenummer 8N60
Beschreibung N-Channel MOSFET Transistor
Hersteller Inchange
Logo Inchange Logo 

Gesamt 2 Seiten
		
8N60 Datasheet, Funktion
INCHANGE Semiconductor
iwswwc.DaNtaS-hCeeth4Ua.conmnel Mosfet Transistor
isc Product Specification
8N60
·FEATURES
·Drain Current ID= 7.5A@ TC=25
·Drain Source Voltage-
: VDSS= 600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.2Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
600
±20
V
V
ID Drain Current-Continuous
7.5 A
IDM Drain Current-Single Plused
30 A
PD Total Dissipation @TC=25
147 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.85 /W
62.5 /W
isc Websitewww.iscsemi.cn


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