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3DD303B Schematic ( PDF Datasheet ) - Inchange

Teilenummer 3DD303B
Beschreibung Silicon Power Transistor
Hersteller Inchange
Logo Inchange Logo 




Gesamt 2 Seiten
3DD303B Datasheet, Funktion
INCHANGE Semiconductor
iscwww.DaStaSilhieceto4Un.coNm PN Power Transistor
isc Product Specification
3DD303B
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.6V(Max) @IC= 0.5A
APPLICATIONS
·Designed for B/W TV vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100 V
VCEO
Collector-Emitter Voltage
60 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
Collector Power Dissipation
PC @ TC=75
TJ Junction Temperature
Tstg Storage Temperature Range
3A
30 W
150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.5 /W
isc Websitewww.iscsemi.cn





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