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Teilenummer | 3DD303B |
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Beschreibung | Silicon Power Transistor | |
Hersteller | Inchange | |
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Gesamt 2 Seiten INCHANGE Semiconductor
iscwww.DaStaSilhieceto4Un.coNm PN Power Transistor
isc Product Specification
3DD303B
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.6V(Max) @IC= 0.5A
APPLICATIONS
·Designed for B/W TV vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100 V
VCEO
Collector-Emitter Voltage
60 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
Collector Power Dissipation
PC @ TC=75℃
TJ Junction Temperature
Tstg Storage Temperature Range
3A
30 W
150 ℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.5 ℃/W
isc Website:www.iscsemi.cn
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ 3DD303B Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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3DD303B | Silicon Power Transistor | Inchange |
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