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RJK0358DPA Schematic ( PDF Datasheet ) - Renesas Technology

Teilenummer RJK0358DPA
Beschreibung Silicon N Channel Power MOS FET Power Switching
Hersteller Renesas Technology
Logo Renesas Technology Logo 




Gesamt 7 Seiten
RJK0358DPA Datasheet, Funktion
RJK0358DPA
www.DataSheet4U.com
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 2.6 mtyp. (at VGS = 10 V)
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 678
4 32 1
4
G
5 678
D DDD
REJ03G1651-0400
Rev.4.00
Apr 10, 2008
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tch = 25°C, Rg 50
3. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-c Note3
Tch
Tstg
Ratings
30
±20
38
152
38
19
36.1
45
2.78
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1651-0400 Rev.4.00 Apr 10, 2008
Page 1 of 6






RJK0358DPA Datasheet, Funktion
RJK0358DPA
Package Dimensions
Package Name
JEITA Package Code
wwwW.PDAaKtaSheet4U.com
RENESAS Code
PWSN0008DA-A
Previous Code
WPAKV
MASS[Typ.]
0.075g
5.1 ± 0.2
0.8Max
0.04Min
4.21Typ
1.27Typ
3.9 ± 0.2
Unit: mm
0.635Max
1.27Typ
4.9 ± 0.1
0.2Typ
0.4 ± 0.06
Ordering Information
Part No.
RJK0358DPA-00-J0
Quantity
2500 pcs
(Ni/Pd/Au plating)
Notice:The reverse pattern of die-pad
support lead described above exists.
Taping
Shipping Container
REJ03G1651-0400 Rev.4.00 Apr 10, 2008
Page 6 of 6

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