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RJK0355DPA Schematic ( PDF Datasheet ) - Renesas Technology

Teilenummer RJK0355DPA
Beschreibung Silicon N Channel Power MOS FET Power Switching
Hersteller Renesas Technology
Logo Renesas Technology Logo 




Gesamt 7 Seiten
RJK0355DPA Datasheet, Funktion
RJK0355DPA
www.DataSheet4U.com
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 8.2 mtyp. (at VGS = 10 V)
Pb-free
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 678
4 32 1
4
G
5 678
D DDD
REJ03G1649-0500
Rev.5.00
Aug 05, 2008
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal resistance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tch = 25°C, Rg 50
3. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-c Note3
Tch
Tstg
Ratings
30
±20
30
120
30
9
8.1
25
5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1649-0500 Rev.5.00 Aug 05, 2008
Page 1 of 6






RJK0355DPA Datasheet, Funktion
RJK0355DPA
Package Dimensions
Package Name
JEITA Package Code
wwwW.PDAaKtaSheet4U.com
RENESAS Code
PWSN0008DA-A
Previous Code
WPAKV
MASS[Typ.]
0.075g
5.1 ± 0.2
0.8Max
0.04Min
4.21Typ
1.27Typ
3.9 ± 0.2
Unit: mm
0.635Max
1.27Typ
4.9 ± 0.1
0.2Typ
0.4 ± 0.06
Ordering Information
Part No.
RJK0355DPA-00-J0
Quantity
2500 pcs
(Ni/Pd/Au plating)
Notice:The reverse pattern of die-pad
support lead described above exists.
Taping
Shipping Container
REJ03G1649-0500 Rev.5.00 Aug 05, 2008
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