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Teilenummer | RJK0353DPA |
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Beschreibung | Silicon N Channel Power MOS FET Power Switching | |
Hersteller | Renesas Technology | |
Logo | ||
Gesamt 7 Seiten RJK0353DPA
www.DataSheet4U.com
Silicon N Channel Power MOS FET
Power Switching
Features
• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 4.0 mΩ typ. (at VGS = 10 V)
• Pb-free
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 678
4 32 1
4
G
5 678
D DDD
REJ03G1647-0300
Rev.3.00
Apr 10, 2008
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-C
Tch
Tstg
Ratings
30
±20
35
140
35
16
25.6
40
3.13
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1647-0300 Rev.3.00 Apr 10, 2008
Page 1 of 6
RJK0353DPA
Package Dimensions
Package Name
JEITA Package Code
wwwW.PDAaKtaSheet4U.com−
RENESAS Code
PWSN0008DA-A
Previous Code
WPAKV
MASS[Typ.]
0.075g
5.1 ± 0.2
0.8Max
0.04Min
4.21Typ
1.27Typ
3.9 ± 0.2
Unit: mm
0.635Max
1.27Typ
4.9 ± 0.1
0.2Typ
0.4 ± 0.06
Ordering Information
Part No.
RJK0353DPA-00-J0
Quantity
2500 pcs
(Ni/Pd/Au plating)
Notice:The reverse pattern of die-pad
support lead described above exists.
Taping
Shipping Container
REJ03G1647-0300 Rev.3.00 Apr 10, 2008
Page 6 of 6
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ RJK0353DPA Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
RJK0353DPA | Silicon N Channel Power MOS FET Power Switching | Renesas Technology |
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