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Teilenummer | RJK0302DPB |
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Beschreibung | Silicon N Channel Power MOS FET Power Switching | |
Hersteller | Renesas Technology | |
Logo | ||
Gesamt 7 Seiten RJK0302DPB
www.DataSheet4U.com
Silicon N Channel Power MOS FET
Power Switching
Features
• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 2.6 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
1 234
4
G
5
D
SSS
123
REJ03G1340-0600
Rev.6.00
Apr 19, 2006
1, 2, 3
4
5
Source
Gate
Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-C
Tch
Tstg
Ratings
30
+16/-12
50
200
50
20
40
60
2.09
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.6.00 Apr 19, 2006 page 1 of 6
RJK0302DPB
Package Dimensions
Package Name
JEITA Package Code
wwwLF.PDAaKtaSheet4U.coSmC-100
RENESAS Code
PTZZ0005DA-A
Previous Code
LFPAKV
MASS[Typ.]
0.080g
4.9
5.3 Max
4.0 ± 0.2
5
0.25 +0.05
–0.03
3.3
Unit: mm
1
1.27
4
0.20 +0.05
–0.03
0° – 8°
0.75 Max
0.10
0.40 ± 0.06 0.25 M
(Ni/Pd/Au plating)
Ordering Information
Part Name
Quantity
Shipping Container
RJK0302DPB-00-J0
2500 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.6.00 Apr 19, 2006 page 6 of 6
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ RJK0302DPB Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
RJK0302DPB | Silicon N Channel Power MOS FET Power Switching | Renesas Technology |
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