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P5506HVG Schematic ( PDF Datasheet ) - Niko

Teilenummer P5506HVG
Beschreibung Dual N-Channel Enhancement Mode Field Effect Transistor
Hersteller Niko
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Gesamt 5 Seiten
P5506HVG Datasheet, Funktion
NIKO-SEM
www.DataSheet4U.com
Dual N-Channel Enhancement Mode
Field Effect Transistor
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60 55m
ID
4.5A
P5506HVG
SOP-8
Lead-Free
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 70 °C
TC = 25 °C
TC = 70 °C
VDS
VGS
ID
IDM
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
TYPICAL
LIMITS
60
±20
4.5
4
20
2
1.3
-55 to 150
UNITS
V
V
A
W
°C
MAXIMUM
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 55 °C
LIMITS
UNIT
MIN TYP MAX
60
1.0 1.5 2.5
V
±100 nA
1
10 µA
1 AUG-19-2004





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