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EN29LV640B Schematic ( PDF Datasheet ) - Eon Silicon Solution

Teilenummer EN29LV640B
Beschreibung 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory
Hersteller Eon Silicon Solution
Logo Eon Silicon Solution Logo 




Gesamt 53 Seiten
EN29LV640B Datasheet, Funktion
www.DataSheet4U.com
EN29LV640T/B
64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640T/B
FEATURES
Single power supply operation
- Full voltage range: 2.7 to 3.6 volts read and
write operations
High performance
- Access times as fast as 70 ns
Low power consumption (typical values at 5
MHz)
- 9 mA typical active read current
- 20 mA typical program/erase current
- Less than 1 μA current in standby or automatic
sleep mode.
Flexible Sector Architecture:
- Eight 8-Kbyte sectors, One hundred and
twenty-seven 32K-Word / 64K-byte sectors.
- 8-Kbyte sectors for Top or Bottom boot.
- Sector/Sector Group protection:
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
Additionally, temporary Sector Group
Unprotect allows code changes in previously
locked sectors.
High performance program/erase speed
- Word program time: 8µs typical
- Sector erase time: 500ms typical
- Chip erase time: 64s typical
JEDEC Standard compatible
Standard DATA# polling and toggle bits
feature
Unlock Bypass Program command supported
Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
Support JEDEC Common Flash Interface
(CFI).
Low Vcc write inhibit < 2.5V
Minimum 100K program/erase endurance
cycles.
RESET# hardware reset pin
- Hardware method to reset the device to read
mode.
WP#/ACC input pin
- Write Protect (WP#) function allows
protection of outermost two boot sectors,
regardless of sector protect status
- Acceleration (ACC) function provides
accelerated program times
Package Options
- 48-pin TSOP (Type 1)
- 48 ball 6mm x 8mm FBGA
Commercial and Industrial Temperature
Range.
GENERAL DESCRIPTION
The EN29LV640T/B is a 64-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 8,388,608 bytes or 4,194,304 words. Any word can be programmed typically in 8µs. The
EN29LV640T/B features 3.0V voltage read and write operation, with access times as fast as 70ns to
eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV640T/B has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector
or full Chip erase operation, where each Sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K
program/erase cycles on each Sector.
.
This Data Sheet may be revised by subsequent versions 1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2007/05/16






EN29LV640B Datasheet, Funktion
www.DataSheet4U.com
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260000–26FFFF
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290000–29FFFF
2A0000–2AFFFF
2B0000–2BFFFF
2C0000–2CFFFF
2D0000–2DFFFF
2E0000–2EFFFF
2F0000–2FFFFF
300000–30FFFF
310000–31FFFF
320000–32FFFF
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380000–38FFFF
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3A0000–3AFFFF
3B0000–3BFFFF
3C0000–3CFFFF
3D0000–3DFFFF
3E0000–3EFFFF
3F0000–3FFFFF
400000–40FFFF
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4C0000–4CFFFF
4D0000–4DFFFF
4E0000–4EFFFF
4F0000–4FFFFF
EN29LV640T/B
130000–137FFF
138000–13FFFF
140000–147FFF
148000–14FFFF
150000–157FFF
158000–15FFFF
160000–167FFF
168000–16FFFF
170000–177FFF
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180000–187FFF
188000–18FFFF
190000–197FFF
198000–19FFFF
1A0000–1A7FFF
1A8000–1AFFFF
1B0000–1B7FFF
1B8000–1BFFFF
1C0000–1C7FFF
1C8000–1CFFFF
1D0000–1D7FFF
1D8000–1DFFFF
1E0000–1E7FFF
1E8000–1EFFFF
1F0000–1F7FFF
1F8000–1FFFFF
200000–207FFF
208000–20FFFF
210000–217FFF
218000–21FFFF
220000–227FFF
228000–22FFFF
230000–237FFF
238000–23FFFF
240000–247FFF
248000–24FFFF
250000–257FFF
258000–25FFFF
260000–267FFF
268000–26FFFF
270000–277FFF
278000–27FFFF
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
6 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2007/05/16

6 Page









EN29LV640B pdf, datenblatt
www.DataSheet4U.com
PRODUCT SELECTOR GUIDE
Product Number
Speed Option
Max Access Time, ns (tBaccB)
Max CE# Access, ns (t )ceB B
Max OE# Access, ns (t )oeB B
BLOCK DIAGRAM
EN29LV640T/B
EN29LV640T/B
-70 -90
70 90
70 90
30 35
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
12 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2007/05/16

12 Page





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