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PDF EN29LV160A Data sheet ( Hoja de datos )
| Número de pieza | EN29LV160A | |
| Descripción | 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory | |
| Fabricantes | Eon Silicon Solution | |
| Logotipo |  |
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EN29LV160A
EN29LV160A
www.Data1Sh6eetM4Ue.cogmabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
FEATURES
• 3.0V, single power supply operation
- Minimizes system level power requirements
• High performance
- Access times as fast as 70 ns
• Low power consumption (typical values at 5
MHz)
- 9 mA typical active read current
- 20 mA typical program/erase current
- Less than 1 µA standby current
• Flexible Sector Architecture:
- One 16-Kbyte, two 8-Kbyte, one 32-Kbyte,
and thirty-one 64-Kbyte sectors (byte mode)
- One 8-Kword, two 4-Kword, one 16-Kword
and thirty-one 32-Kword sectors (word mode)
• Sector protection :
- Hardware locking of sectors to prevent
program or erase operations within individual
sectors
- Additionally, temporary Sector Group
Unprotect allows code changes in previously
locked sectors.
• High performance program/erase speed
- Byte/Word program time: 8µs typical
- Sector erase time: 500ms typical
- Chip erase time: 17.5s typical
• JEDEC Standard program and erase
commands
• JEDEC standard DATA# polling and toggle
bits feature
• Single Sector and Chip Erase
• Sector Unprotect Mode
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
• Triple-metal double-poly triple-well CMOS
Flash Technology
• Low Vcc write inhibit < 2.5V
• minimum 1,000K program/erase endurance
cycle
• Package Options
- 48-pin TSOP (Type 1)
- 48 ball 6mm x 8mm FBGA
• Commercial and Industrial Temperature
Range
GENERAL DESCRIPTION
The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs.
The EN29LV160A features 3.0V voltage read and write operation, with access times as fast as
70ns to eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV160A has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable
(WE#) controls, which eliminate bus contention issues. This device is designed to allow either
single Sector or full chip erase operation, where each Sector can be individually protected
against program/erase operations or temporarily unprotected to erase or program. The device
can sustain a minimum of 1,000K program/erase cycles on each Sector.
This Data Sheet may be revised by subsequent versions 1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2005/01/07
1 page  
EN29LV160A
Table 3. Bottom Boot Sector Address Tables (EN29LV160AB)
www.DataSheet4U.com
Sector Size
(Kbytes/
Kwords)
Sector A19 A18 A17 A16 A15 A14 A13 A12
SA0 0 0 0 0 0 0 0 X
16/8
SA1 0 0 0 0 0 0 1 0
8/4
SA2 0 0 0 0 0 0 1 1
8/4
SA3 0 0 0 0 0 1 X X
32/16
SA4 0 0 0 0 1 X X X
SA5 0 0 0 1 0 X X X
SA6 0 0 0 1 1 X X X
SA7 0 0 1 0 0 X X X
SA8 0 0 1 0 1 X X X
SA9 0 0 1 1 0 X X X
SA10 0 0 1 1 1 X X X
SA11 0 1 0 0 0 X X X
SA12 0 1 0 0 1 X X X
SA13 0 1 0 1 0 X X X
SA14 0 1 0 1 1 X X X
SA15 0 1 1 0 0 X X X
SA16 0 1 1 0 1 X X X
SA17 0 1 1 1 0 X X X
SA18 0 1 1 1 1 X X X
SA19 1 0 0 0 0 X X X
SA20 1 0 0 0 1 X X X
SA21 1 0 0 1 0 X X X
SA22 1 0 0 1 1 X X X
SA23 1 0 1 0 0 X X X
SA24 1 0 1 0 1 X X X
SA25 1 0 1 1 0 X X X
SA26 1 0 1 1 1 X X X
SA27 1 1 0 0 0 X X X
SA28 1 1 0 0 1 X X X
SA29 1 1 0 1 0 X X X
SA30 1 1 0 1 1 X X X
SA31 1 1 1 0 0 X X X
SA32 1 1 1 0 1 X X X
SA33 1 1 1 1 0 X X X
SA34 1 1 1 1 1 X X X
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
Address Range (in hexadecimal)
Byte mode (x8)
000000–003FFF
004000–005FFF
006000–007FFF
008000–00FFFF
010000–01FFFF
020000–02FFFF
030000–03FFFF
040000–04FFFF
050000–05FFFF
060000–06FFFF
070000–07FFFF
080000–08FFFF
090000–09FFFF
0A0000–0AFFFF
0B0000–0BFFFF
0C0000–0CFFFF
0D0000–0DFFFF
0E0000–0EFFFF
0F0000–0FFFFF
100000–10FFFF
110000–11FFFF
120000–12FFFF
130000–13FFFF
140000–14FFFF
150000–15FFFF
160000–16FFFF
170000–17FFFF
180000–18FFFF
190000–19FFFF
1A0000–1AFFFF
1B0000–1BFFFF
1C0000–1CFFFF
1D0000–1DFFFF
1E0000–1EFFFF
1F0000–1FFFFF
Word Mode
(x16)
00000–01FFF
02000–02FFF
03000–03FFF
04000–07FFF
08000–0FFFF
10000–17FFF
18000–1FFFF
20000–27FFF
28000–2FFFF
30000–37FFF
38000–3FFFF
40000–47FFF
48000–4FFFF
50000–57FFF
58000–5FFFF
60000–67FFF
68000–6FFFF
70000–77FFF
78000–7FFFF
80000–87FFF
88000–8FFFF
90000–97FFF
98000–9FFFF
A0000–A7FFF
A8000–AFFFF
B0000–B7FFF
B8000–BFFFF
C0000–C7FFF
C8000–CFFFF
D0000–D7FFF
D8000–DFFFF
E0000–E7FFF
E8000–EFFFF
F0000–F7FFF
F8000–FFFFF
This Data Sheet may be revised by subsequent versions
5
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2005/01/07
5 Page 
EN29LV160A
www.DataSheet4U.com
Table 7. Device Geometry Definition
Addresses
(Word mode)
27h
28h
29h
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Bh
3Ch
Addresses
(Byte Mode)
4Eh
50h
52h
54h
56h
58h
5Ah
5Ch
5Eh
60h
62h
64h
66h
68h
6Ah
6Ch
6Eh
70h
72h
74h
76h
78h
Data
0015h
0002h
0000h
0000h
0000h
0004h
0000h
0000h
0040h
0000h
0001h
0000h
0020h
0000h
0000h
0000h
0080h
0000h
001Eh
0000h
0000h
0001h
Description
Device Size = 2^N byte
Flash Device Interface description (refer to CFI publication 100)
Max. number of byte in multi-byte write = 2^N
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the CFI specification of CFI publication 100)
Erase Block Region 2 Information
Erase Block Region 3 Information
Erase Block Region 4 Information
Table 8. Primary Vendor-specific Extended Query
Adresses
(Word Mode)
40h
41h
42h
43h
44h
45h
Addresses
(Byte Mode)
80h
82h
84h
86h
88h
8Ah
46h 8Ch
47h 8Eh
48h 90h
49h 92h
4Ah 94h
4Bh 96h
4Ch 98h
Data
0050h
0052h
0049h
0031h
0030h
0000h
0002h
0001h
0001h
0004h
0000h
0000h
0000h
Description
Query-unique ASCII string “PRI”
Major version number, ASCII
Minor version number, ASCII
Address Sensitive Unlock
0 = Required, 1 = Not Required
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
Sector Protect
0 = Not Supported, X = Number of sectors in per group
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
Sector Protect/Unprotect scheme
01 = 29F040 mode, 02 = 29F016 mode,
03 = 29F400 mode, 04 = 29LV800A mode
Simultaneous Operation
00 = Not Supported, 01 = Supported
Burst Mode Type
00 = Not Supported, 01 = Supported
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
This Data Sheet may be revised by subsequent versions 11 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2005/01/07
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet EN29LV160A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EN29LV160 | 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory | Eon Silicon Solution |
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