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RCLAMP3304P Schematic ( PDF Datasheet ) - Semtech Corporation

Teilenummer RCLAMP3304P
Beschreibung (RCLAMP2504P / RCLAMP3304P) 2.5V & 3.3V TVS Arrays
Hersteller Semtech Corporation
Logo Semtech Corporation Logo 




Gesamt 11 Seiten
RCLAMP3304P Datasheet, Funktion
RClamp2504P & RClamp3304P
RailClamp®
2.5V & 3.3V TVS Arrays
PROTECTION PRODUCTS - RailClamp®
www.DataSheet4U.com
Description
Features
RailClamp® is a low capacitance TVS array designed to
protect high speed data interfaces. This series has been
specifically designed to protect sensitive components
which are connected to data and transmission lines from
overvoltage caused by ESD (electrostatic discharge), CDE
(Cable Discharge Events), and EFT (electrical fast tran-
sients).
The monolithic design incorporates surge rated, low
capacitance steering diodes and a TVS diode in a single
package. Each line has a maximum capacitance of
< 0.8pF to ground. The capacitance of each line is well
matched for consistant signal balance. This device is
optimized for ESD protection of portable electronics. It
may be used to meet the ESD immunity requirements
of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact
discharge).
The RClampTM2504P and RClampTM3304P are con-
structed using Semtech’s proprietary EPD process
technology. The EPD process provides low standoff
voltages with significant reductions in leakage current
and capacitance over silicon-avalanche diode pro-
cesses. They feature a true operating voltage of 2.5
volts and 3.3 volts for superior protection.
These devices are in a 6-pin, RoHS/WEEE compliant,
SLP1616P6 package measuring 1.6 x 1.6 x 0.58mm.
The leads are spaced at a pitch of 0.5mm and are
finished with lead-free NiPdAu.
‹ Transient protection for high-speed data lines to
IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
IEC 61000-4-4 (EFT) 40A (5/50ns)
‹ Array of surge rated diodes with internal TVS Diode
‹ Small package saves board space
‹ Protects up to four I/O lines
‹ Low capacitance (<0.8pF) for high-speed interfaces
‹ Minimal insertion loss to 3.0GHz
‹ Low operating voltage: 2.5V and 3.3V
‹ Low leakage current and clamping voltage
‹ Solid-state silicon-avalanche technology
Mechanical Characteristics
‹ SLP1616P6 package
‹ RoHS/WEEE Compliant
‹ Nominal Dimensions: 1.6 x 1.6 x 0.58 mm
‹ Lead Finish: NiPdAu
‹ Molding compound flammability rating: UL 94V-0
‹ Marking: Marking Code + Date Code
‹ Packaging: Tape and Reel
Applications
‹ Multi Media Card (MMC) Interfaces
‹ SATA Interfaces
‹ SD Card Interfaces
‹ SIM Ports
‹ MDDI Ports
‹ MPPI Ports
Circuit Diagram
Pin Configuration
3
12
56
GND
1.6
1
6
0.5
1.6
0.58
Revision 01/15/2008
SLP1616P6 (Bottom View)
Nominal Dimensions in mm
1 www.semtech.com






RCLAMP3304P Datasheet, Funktion
RClamp2504P & RClamp3304P
PROTECTION PRODUCTS
Appwlwiwc.aDattiaoSnheset4IUn.cfoomrmation
Device Connection for Protection of Four High-Speed
Data Lines
These devices are designed to protect low voltage data
lines operating at 2.5 volts or 3.3 volts. When the
voltage on the protected line exceeds the TVS working
voltage, the steering diodes are forward biased,
conducting the transient current away from the
sensitive circuitry, through the internal TVS to ground.
Data lines are connected at pins 1, 2, 5 and 6. The
center pin should be connected directly to a ground
plane. The path length is kept as short as possible to
minimize parasitic inductance. For best results,
multiple micro-vias connected to ground are
recommended. Pins 3 and 4 are not connected.
Note that pin 3 is connected internally to the cathode
of the low voltage TVS. It is not recommended that
this pins be directly connected to a DC source greater
than the snap-back votlage (VSB) as the device can
latch on as described below.
Figure 1. Pin Configuration (Top Side View)
16
2 Gnd 5
34
Pin
1, 2, 5, 6
4
3
Center Tab
Identification
Input/Output Lines
Not Connected
2.5V or 3.3V
(Do not connect this pin to a DC supply)
greater than VSB)
Ground
EPD TVS Characteristics
These devices are constructed using Semtech’s
proprietary EPD technology. By utilizing the EPD tech-
nology, the device can effectively operate at 3.3V while
maintaining excellent electrical characteristics.
Protection of Four Data Lines
The EPD TVS employs a complex nppn structure in
contrast to the pn structure normally found in tradi-
tional silicon-avalanche TVS diodes. Since the EPD
TVS devices use a 4-layer structure, they exhibit a
slightly different IV characteristic curve when compared
to conventional devices. During normal operation, the
device represents a high-impedance to the circuit up to
the device working voltage (VRWM). During an ESD
event, the device will begin to conduct and will enter a
low impedance state when the punch through voltage
(VPT) is exceeded. Unlike a conventional device, the low
voltage TVS will exhibit a slight negative resistance
characteristic as it conducts current. This characteris-
tic aids in lowering the clamping voltage of the device,
but must be considered in applications where DC
voltages are present.
When the TVS is conducting current, it will exhibit a
slight “snap-back” or negative resistance
characteristics due to its structure. This point is
defined on the curve by the snap-back voltage (VSB)
1
Gnd
and snap-back current (ISB). To return to a non-
conducting state, the current through the device must
fall below the ISB (approximately <50mA) and the
voltage must fall below the VSB (normally 2.8 volts for a
3.3V device). If a 3.3V TVS is connected to 3.3V DC
source, it will never fall below the snap-back voltage of
2.8V and will therefore stay in a conducting state.
© 2008 Semtech Corp.
6
www.semtech.com

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