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PDF RSS125N03 Data sheet ( Hoja de datos )
| Número de pieza | RSS125N03 | |
| Descripción | Switching | |
| Fabricantes | ROHM Semiconductor | |
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Transistors
Switching (30V, 12.5A)
RSS125N03
RSS125N03
zFeatures
1) Low on-resistance.
www.DataSheet4U.com2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8) .
zApplication
Power switching, DC / DC converter.
zStructure
Silicon N-channel
MOS FET
zPackaging specifications
Type
Package
Code
Basic ordering unit (pieces)
RSS125N03
Taping
TB
2500
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP
IS
ISP
PD
Tch
Tstg
Limits
30
20
±12.5
±50
1.6
6.4
2
150
−55 to 150
zExternal dimensions (Unit : mm)
SOP8
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6 )Drain
(7) Drain
(8) Drain
0.4Min.
3.9
6.0
Each lead has same dimensions
zEquivalent circuit
(8) (7) (6) (5)
(8) (7) (6) (5)
Unit
V
V
A
A ∗1
A
A ∗1
W ∗2
°C
°C
∗2
∗1
(1) (2) (3) (4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) (2) (3) (4)
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6 )Drain
(7) Drain
(8) Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
zThermal resistance (Ta=25°C)
Parameter
Channel to ambient
∗ Mounted on a ceramic board.
Symbol
Rth (ch-a)
Limits
62.5
Unit
°C / W
∗
1/3
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet RSS125N03.PDF ] | |
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