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RMDA25000 Schematic ( PDF Datasheet ) - Raytheon Company

Teilenummer RMDA25000
Beschreibung 23-28 GHz Driver Amplifier MMIC
Hersteller Raytheon Company
Logo Raytheon Company Logo 




Gesamt 6 Seiten
RMDA25000 Datasheet, Funktion
RMDA25000
23-28 GHz Driver Amplifier MMIC
Description
Features
www.DataSheet4U.com
Absolute
Maximum
Ratings
ADVANCED INFORMATION
The Raytheon RMDA25000 is a high efficiency driver amplifier designed for use in point to point radio, point to
multi-point communications, LMDS and other millimeter wave applications. The RMDA25000 is a 3-stage GaAs
MMIC amplifier utilizing Raytheon’s advanced 0.15µm gate length Power PHEMT process and can be used in
conjunction with other driver or power amplifiers to achieve the required total power output.
32 dB small signal gain (typ.)
21 dBm saturated power out (typ.)
Circuit contains individual source Vias
Chip Size 2.79 mm x 1.63 mm
Parameter
Positive DC Voltage (+5 V Typical)
Negative DC Voltage
Simultaneous (Vd - Vg)
Positive DC Current
RF Input Power (from 50 source)
Operating Base plate Temperature
Storage Temperature Range
Thermal Resistance
(Channel to Backside)
Symbol
Vd
Vg
Vdg
ID
PIN
TC
TStg
Rjc
Value
+6
-2
+8
360
+10
-30 to +85
-55 to +125
44
Unit
Volts
Volts
Volts
mA
dBm
°C
°C
°C/W
Electrical
Characteristics
(At 25°C)
50 system, Vd=+5 V,
Quiescent current
(Idq)=250 mA
Parameter
Frequency Range
Gate Supply Voltage1(Vg)
Gain Small Signal
Gain Variation vs.
Frequency
Power Output at 1 dB
Compression
Power Output Saturated:
(Pin=-5 dBm)
Min
23
27
Typ Max Unit
28 GHz
-0.4 V
32 36 dB
+/-2 dB
22 dBm
23 dBm
Parameter
Drain Current at
Pin=-5 dBm
Drain Current at
P1 dB Compression
Power Added Efficiency
(PAE): at P1dB
OIP3
Input Return Loss
Output Return Loss
Min
3
7
Typ Max Unit
250 mA
270 mA
10 %
29 dBm
10 dB
8 dB
Application
Information
www.raytheon.com/micro
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen
environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC
Ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to
prevent static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long
corresponding to a typically 2 mils gap between the chip and the substrate material.
Note:
1. Typical range of the negative gate voltages is -0.9 to 0.0V to set typical Idq of 250 mA.
Characteristic performance data and specifications are subject to change without notice.
Revised April 16, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810






RMDA25000 Datasheet, Funktion
Worldwide Sales
Representatives
ADVANCED INFORMATION
North
America
www.DataSheet4U.com
D&L Technical Sales
6139 S. Rural Road, #102
Tempe, AZ 85283
480-730-9553
fax: 480-730-9647
Nicholas Delvecchio, Jr.
Hi-Peak Technical Sales
P.O. Box 6067
Amherst, NH 03031
866-230-5453
fax: 603-672-9228
sales@hi–peak.com
Spartech South
2115 Palm Bay Road, NE,
Suite 4
Palm Bay, FL 32904
321-727-8045
fax: 321-727-8086
Jim Morris
TEQ Sales, Inc.
920 Davis Road, Suite 304
Elgin, IL 60123
847-742-3767
fax: 847-742-3947
Dennis Culpepper
Cantec Representatives
8 Strathearn Ave, No. 18
Brampton, Ontario
Canada L6T 4L9
905-791-5922
fax: 905-791-7940
Dave Batten
Steward Technology
6990 Village Pkwy #206
Dublin, CA 94568
925-833-7978
fax: 925-560-6522
John Steward
Europe
Sangus OY
Lunkintie 21,
90460 Oulunsalo
Finland
358-8-8251-100
fax: 358-8-8251-110
Juha Virtala
Sangus AB
Berghamnvagen 68
Box 5004
S–165 10 Hasselby
Sweden
Ronny Gustafson
468-0-380210
fax: 468-0-3720954
Globes Elektronik & Co.
Klarastrabe 12
74072 Heilbronn
Germany
49-7131-7810-0
fax: 49-7131-7810-20
Ulrich Blievernicht
MTI Engineering Ltd.
Afek Industrial Park
Hamelacha 11
New Industrial Area
Rosh Hayin 48091
Israel
972-3-902-5555
fax: 972-3-902-5556
Adi Peleg
Sirces srl
Via C. Boncompagni, 3B
20139 Milano
Italy
3902-57404785
fax: 3902-57409243
Nicola Iacovino
Asia
ITX Corporation
2–5, Kasumigaseki
3–Chome
Chiyoda–Ku
Tokyo 100-6014 Japan
81-3-4288-7073
fax: 81-3-4288-7243
Maekawa Ryosuke
maekawa.ryosuke@
itx–corp.co.jp
Sea Union
9F-1, Building A, No 19-3
San-Chung Road
Nankang Software Park
Taiwan, ROC
Taipei 115
02-2655-3989
fax: 02-2655-3918
Murphy Su
Worldwide
Distribution
Headquarters
United Kingdom
6321 San Ignacio Drive Burnt Ash Road
San Jose, CA 95119
Aylesford, Kent
408-360-4073
England
fax: 408-281-8802
ME207XB
Art Herbig
44 1622882467
fax: 44 1622882469
Belgium and Luxembourg
Cipalstraat
rfsales.uk@
bfioptilas.avnet.com
2440 GEEL
Belgium
32 14 570670
fax: 32 14 570679
France
4 Allee du Cantal
Evry, Cedex
France
33 16079 5900
fax: 33 16079 8903
sales.fr@
bfioptilas.avnet.com
Holland
Spain
Chr. Huygensweg 17
C/Isobel Colbrand, 6 – 4a
2400 AJ ALPHEN AAN DEN 28050 Madrid
RIJN Spain
The Netherlands
34 913588611
31 172 446060
fax: 34 913589271
fax: 33 172 443414
sales.es@
sales.nl@
bfioptilas.avnet.com
bfioptilas.avnet.com
Sales Office
Headquarters
United States
(East Coast)
Raytheon
362 Lowell Street
Andover, MA 01810
978-684-8628
fax: 978-684-8646
Walter Shelmet
wshelmet@
rrfc.raytheon.com
United States
(West Coast)
Raytheon
362 Lowell Street
Andover, MA 01810
978-684-8919
fax: 978-684-8646
Rob Sinclair
robert_w_sinclair@
rrfc.raytheon.com
Europe
Raytheon
AM Teckenberg 53
40883 Ratingen
Germany
49-2102-706-155
fax: 49-2102-706-156
Peter Hales
peter_j_hales@
raytheon.com
Asia
Raytheon
Room 601, Gook Je Ctr. Bldg
191 Hangang Ro 2-GA
Yongsan-Gu, Seoul,
Korea 140-702
82-2-796-5797
fax: 82-2-796-5790
T.G. Lee
tg_lee@
rrfc.raytheon.com
Customer
Support
www.raytheon.com/micro
978-684-8900
fax: 978-684-5452
Characteristic performance data and specifications are subject to change without notice.
Revised April 16, 2001
Page 6
Raytheon RF Components
362 Lowell Street
Andover, MA 01810

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