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Número de pieza | DSEP29-03A | |
Descripción | HiPerFREDTM Epitaxial Diode | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DSEP29-03A (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! DSEP 29-03A
HiPerFREDTM Epitaxial Diode
with soft recovery
IFAV = 30 A
VRRM = 300 V
trr = 30 ns
VRSM
V
300
www.DataSheet4U.com
VRRM
V
300
Type
DSEP 29-03A
TO-220 AC
AC
C
A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol
IFRMS
IFAVM
IFSM
EAS
IAR
TVJ
TVJM
Tstg
Ptot
Md
Weight
Conditions
TC = 145°C; rectangular, d = 0.5
TVJ = 45°C; tp = 10 ms (50 Hz), sine
TVJ = 25°C; non-repetitive
IAS = 3 A; L = 180 µH
VA = 1.5·VR typ.; f = 10 kHz; repetitive
TC = 25°C
mounting torque
typical
Maximum Ratings
35 A
30 A
300 A
1.2 mJ
0.3
-55...+175
175
-55...+150
165
0.4...0.6
2
A
°C
°C
°C
W
Nm
g
Symbol
IR x
VF y
RthJC
RthCH
trr
IRM
Conditions
TVJ = 25°C VR = VRRM
TVJ = 150°C VR = VRRM
IF = 30 A; TVJ = 150°C
TVJ = 25°C
IF = 1 A; -di/dt = 200 A/ms;
VR = 30 V; TVJ = 25°C
VR = 100 V; IF = 50 A; -diF/dt = 100 A/ms
TVJ = 100°C
Characteristic Values
typ. max.
250 mA
1 mA
0.93 V
1.26 V
0.9 K/W
0.5 K/W
30 ns
7A
Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 %
y Pulse Width = 300 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
Features
q International standard package
q Planar passivated chips
q Very short recovery time
q Extremely low switching losses
q Low IRM-values
q Soft recovery behaviour
q Epoxy meets UL 94V-0
Applications
q Antiparallel diode for high frequency
switching devices
q Antisaturation diode
q Snubber diode
q Free wheeling diode in converters
and motor control circuits
q Rectifiers in switch mode power
supplies (SMPS)
q Inductive heating
q Uninterruptible power supplies (UPS)
q Ultrasonic cleaners and welders
Advantages
q Avalanche voltage rated for reliable
operation
q Soft reverse recovery for low
EMI/RFI
q Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
1-2
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet DSEP29-03A.PDF ] |
Número de pieza | Descripción | Fabricantes |
DSEP29-03A | HiPerFREDTM Epitaxial Diode | IXYS Corporation |
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