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STP9NC60
STP9NC60FP
N-CHANNEL 600V - 0.6Ω - 9A - TO-220/TO-220FP
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STP9NC60
www.DataSheet4U.cSoTmP9NC60FP
600 V
600 V
< 0.75 Ω 9.0 A
< 0.75 Ω 9.0 A (*)
s TYPICAL RDS(on) = 0.6 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (1)
PTOT
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
VISO
Tstg
Tj
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
.
February 2002
Value
STP9NC60 STP9NC60FP
600
600
±30
9 9 (*)
5.7 5.7 (*)
36 36 (*)
125 40
1.0 0.32
3.5
- 2500
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
– 55 to 150
°C
(1)ISD ≤9A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(*) Limited only by Maximum Temperature Allowed
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