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CHA7114 Schematic ( PDF Datasheet ) - United Monolithic Semiconductors

Teilenummer CHA7114
Beschreibung X Band High Power Amplifier
Hersteller United Monolithic Semiconductors
Logo United Monolithic Semiconductors Logo 




Gesamt 8 Seiten
CHA7114 Datasheet, Funktion
CHA7114
X Band High Power Amplifier
GaAs Monolithic Microwave IC
Description
www.DataSheet4U.comThe CHA7114 is a monolithic two-stage
GaAs high power amplifier designed for X
band applications.
This device is manufactured using a UMS
0.25 µm power pHEMT process, including,
via holes through the substrate and air
bridges.
To simplify the assembly process:
The backside of the chip is both RF and
DC grounded
Bond pads and back side are gold
plated for compatibility with eutectic die
attach method and thermo-compression
bonding process.
Main Features
0.25µm Power pHEMT Technology
8.5–11.5GHz Frequency Range
8W Output Power @ 4dBc
High PAE: > 40% @ 4dBc
20dB nominal Gain
Quiescent Bias point: Vd = 8V, Id = 2A
Chip size: 4.41mm x 3.31mm x 0.07mm
Vg2 Vd2
Vg1 Vd1
IN
Vg1 Vd1
OUT
Vg2 Vd2
50
45
PAE @ 4dBc
40
Pout @ 4dBc
35
30
25
20 Linear Gain
15
Pulse : 25µs 10%
10
8 8,5 9 9,5 10 10,5 11 11,5 12
Frequency (GHz)
Main Characteristics
Tamb = +25°C (Tamb is the back-side of the chip)
Vd = 8V, Id (Quiescent) = 2A, Pulse width = 25µs, Duty cycle = 10%
Symbol
Parameter
Min
Top Operating temperature range
-40
Fop Operating frequency range
8.5
P_4dBc Output power @ 4dBc @ 25°C
G Small signal gain @ 25°C
Typ
8
20
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
Max
+80
11.5
Unit
°C
GHz
W
dB
Ref : DSCHA7114-7347 - 13 Dec 07
1/8 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax : +33 (0) 1 69 33 03 09






CHA7114 Datasheet, Funktion
CHA7114
X-band High Power Amplifier
www.DataSheet4U.com
16 15 14 13 12
1
2
34 5 6 7
11
10
9
8
Chip Mechanical Data and Pin references
Chip width and length are given with a tolerance of +/- 35µm
Chip thickness = 70µm +/- 10µm
HF pads (1, 10) = 118µm x 196µm
DC pads (3, 4, 5, 6, 7, 12, 13, 14, 15, 16) = 96µm x 96µm
DC pads (8, 11) = 186µm x 96 µm
Pin number
2, 9
3, 7, 12, 16
1
4, 6, 13, 15
5, 8, 11, 14
10
Pin name
G1, G2
IN
Vg1R, Vg2R
Vd1, Vd2
OUT
Description
Not Connected
Not Connected
Input RF port
Vg: Negative supply voltage (through divided bridge
Network)
Vd: Positive supply voltage
Output RF port
Ref. : DSCHA7114-7347 - 13 Dec 07
6/8
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice

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