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Teilenummer | CHA7012 |
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Beschreibung | X-band HBT High Power Amplifier | |
Hersteller | United Monolithic Semiconductors | |
Logo | ||
Gesamt 10 Seiten CHA7012
X-band HBT High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA7012 chip is a monolithic two-
stage GaAs high power amplifier designed
www.DataSheet4U.cfomr X band applications.
This device is manufactured using a GaInP
HBT process, including, via holes through
the substrate and air bridge. A nitride layer
protects the transistors and the passive
components. Special heat removal
techniques are implemented to guarantee
high reliability.
To simplify the assembly process:
-the backside of the chip is both RF and
DC grounded
-bond pads and back side are gold plated
for compatibility with eutectic die attach
method and thermosonic or
thermocompression bonding process.
Main Features
Frequency band : 9.2 -10.4GHz
Output power (P3dB ): 38.5dBm
High linear gain: > 20dB
High PAE: > 38%
Two biasing modes:
-VDigital control thanks to TTL interface
-VAnalog control thanks to biasing
circuit
Chip size: 5.00 x 3.68 x 0.1mm
TI Vc TO
TTL
Circuit
Vctrl Vc Vc
Biasing
Circuit
IN OUT
TTL
Circuit
TI Vc TO
Biasing
Circuit
Vctrl Vc Vc
44
PAE @ 3dBc (%)
40
36 Pout @ 3dBc
(dBm
32
28
Linear Gain (Pin=0dBm)
24
20
16
9 9.2 9.4 9.6 9.8 10 10.2 10.4 10.6
Main Characteristics
Frequency( GHz)
Pout & PAE @3dBc and Linear Gain (Temperature 25°C)
Vc=7.5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20%
Symbol
Parameter
Min Typ Max Unit
Fop Operating frequency range
9.2 10.4 GHz
Psat Saturated output power @ 25°C
9W
P_3dBc Output power @ 3dBc @ 25°C
7W
G Small signal gain @ 25°C
20 dB
Top Operating temperature range -40 +80 °C
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHA70127235 - 23 Aug 07
1/10 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA7012
X-band High Power Amplifier
3
2.9
2.8
2.7
2.6
2.5
www.DataSheet4U.com
2.4
2.3
2.2
2.1
2
9.2GHz
9.4GHz
9.6GHz
9.8GHz
10GHz
10.2GHz
10.4GHz
-1 0 1 2 3 4 5 6 7 8
Compression (dB)
Collector current @ 25°C versus compression and fr equency
Temperatures: -40°C; 20°C; +80°C Vc=7.5V Pulse= 100µs Duty cycle 20%
3.0
2.8
2.6 Vctrl
2.4 TTL Input Voltage
2.2
2.0
+80 °C
1.8
1.6
1.4
20 °C
20 °C
1.2
+80 °C
-40 °C
1.0 -40 °C
0.8
0.6
0.4
0.2
0.0
0123456
TI/Vctrl (V)
Collector quiescent current versus TI & Vctrl and temperature
Temperatures: -40°C; 20°C;+80°C Vc=7.5V Pulse= 100µs Duty cycle 20%
Ref. : DSCHA70127235 - 23 Aug 07
6/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6 Page | ||
Seiten | Gesamt 10 Seiten | |
PDF Download | [ CHA7012 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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