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PDF APM9435K Data sheet ( Hoja de datos )

Número de pieza APM9435K
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes Anpec Electronics Coropration 
Logotipo Anpec Electronics Coropration Logotipo



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No Preview Available ! APM9435K Hoja de datos, Descripción, Manual

APM9435K
P-Channel Enhancement Mode MOSFET
Features
Pin Description
-30V/-4.6A ,
RDS(ON)=52m(typ.) @ VGS=-10V
RDS(ON)=80m(typ.) @ VGS=-4.5V
Super High Dense Cell Design
www.DataSheet4U.com Reliable and Rugged
Lead Free Available (RoHS Compliant)
Applications
D
D
D
D
S
S
S
G
Top View of SOP 8
( 1, 2, 3 )
S SS
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
(4)
G
D DDD
(5,6,7,8)
P-Channel MOSFET
Ordering and Marking Information
APM9435
Lead Free Code
Handling Code
Temp. Range
Package Code
Package Code
K : SOP-8
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM9435 K :
APM9435
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
1
www.anpec.com.tw

1 page




APM9435K pdf
APM9435K
Typical Characteristics (Cont.)
www.DataSheet4U.com
Output Characteristics
20
18
V = -5, -6, -7, -8, -9, -10V
GS
16 -4V
14
12
10
8
6 -3V
4
2
0
012345678
-VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
140
130
120
110
V = -4.5V
100
GS
90
80
70
60
V = -10V
GS
50
40
30
20
0 2 4 6 8 10 12 14 16 18 20
-ID - Drain Current (A)
Transfer Characteristics
20
18
16
14
12
10
8 T =125oC
j
6
T =25oC
4j
T =-55oC
j
2
0
012345
-VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
I
DS
=
-250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
5
www.anpec.com.tw

5 Page










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